Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T15:39:03.589Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed PECVD Growth of Silicon Nanowires on Various Substrates

Published online by Cambridge University Press:  01 February 2011

David Parlevliet  and
John C. L. Cornish
David Parlevliet
Affiliation:
[email protected], Murdoch University, Physics & Energy Studies, EEPE, DSE, Murdoch University, South St, Murdoch WA 6150, Murdoch, 6150, Australia, (+61) 93602157, (+61) 9606183
John C. L. Cornish
Affiliation:
[email protected], Murdoch University, Physics & Energy Studies, EEPE, DSE, Murdoch University, South St, Murdoch WA 6150, Murdoch, 6150, Australia
Get access

Abstract

Silicon nanowires with high aspect ratio were grown using PPECVD and a gold catalyst on a variety of different substrates. The morphology of the nanowires was investigated for a range of crystalline silicon, glass, metal, ITO coated and amorphous silicon coated glass substrates. Deposition of the nanowires was carried out in a parallel plate PECVD chamber modified for PPECVD using a 1kHz square wave to modulate the 13.56MHz RF signal. Samples were analyzed using either a Phillips XL20 SEM of a ZEISS 1555 VP FESEM. The average diameter of the nanowires was found to be independent of the substrate used. The silicon nanowires would grow on all of the substrates tested, however the density varied greatly. It was found that nanowires grew with higher density on the ITO coated glass substrates rather than the uncoated glass substrates. Aligned nanowire growth was observed on polished copper substrates. Of all the substrates trialed, ITO coated aluminosilicate glass proved to be the most effective substrate for the growth of silicon nanowires.

Keywords

nanostructureSisemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1058: Symposium JJ – Nanowires–Novel Assembly Concepts and Device Integration , 2007 , 1058-JJ03-30
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Wagner, R. S. and Ellis, W. C., Applied Physics Letters 4 (5), 89 (1964).Google Scholar
2 Hofmann, S., Ducati, C., Neill, R. J. et al. , Journal of Applied Physics 94 (9), 6005 (2003).Google Scholar
3 Parlevliet, D.A. and Cornish, J C L, presented at the 2006 International Conference on Nanoscience and Nanotechnology, Brisbane Australia, 2006 (unpublished).Google Scholar
4 Wu, Yijing, Yan, Haoquan, and Yang, Peidong, Topics in Catalysis 19 (2), 197 (2002).Google Scholar
5 Jagannathan, H., Nishi, Y., Reuter, M. et al. , Applied Physics Letters 88 (10), 103113 (2006).Google Scholar
6 Marsen, B. and Sattler, K., Physical Review B (Condensed Matter) 60 (16), 11593 (1999).Google Scholar
7 Huo, J., Solanki, R., Freeouf, J.L. et al. , Nanotechnology 15 (12), 1848 (2004); G.Goncher, R. Solanki, J.R. Carruthers et al., Journal of Electronic Materials 35 (7), 1509 (2006).Google Scholar
8 Gotza, M., Dutoit, M., and Ilegems, M., Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 16 (2), 582 (1998).Google Scholar
9 Xing, Y.J., Yu, D.P., Xi, Z.H. et al. , Applied Physics A: Materials Science & Processing 76 (4), 551 (2003).Google Scholar
10 Cui, Yi, Lauhon, Lincoln J., Gudiksen, Mark S. et al. , Applied Physics Letters 78 (15),2214 (2001); D. N. McIlroy, A. Alkhateeb, D. Zhang et al., Journal of Physics-Condensed Matter 16 (12), R415 (2004).Google Scholar
11 Westwater, J., Gosain, D.P., Tomiya, S. et al. , Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 15 (3), 554 (1997).Google Scholar
12 Roest, A.L., Verheijen, M.A., Wunnicke, O. et al. , Nanotechnology 17 (11), 271 (2006).Google Scholar