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Pulsed Laser Processing of Metals and Semiconductors in Reactive Atmospheres: Laser Nitriding and Carburizing

Published online by Cambridge University Press:  15 February 2011

Ettore Carpene  and
Peter Schaaf
Ettore Carpene
Affiliation:
[email protected]
Peter Schaaf
Affiliation:
[email protected]
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Abstract

Hard surface coatings and thin layers can be synthesized by irradiating pure substrates with short laser pulses in reactive atmospheres. Various lasers with different pulse durations τ and wavelengths λ can be used for this purpose: XeCl excimer laser, Nd-YAG laser, free electron laser and Ti:sapphire laser. The irradiation of materials such as aluminum, iron and silicon in controlled nitrogen and methane atmospheres leads to surface modifications (e.g. hardness improvement) and to the formation of homogeneous coatings. The evolution of the surface properties (phase formation, hardness) as well as the mass transport mechanisms during the laser irradiation have been studied in detail as a function of the experimental parameters (laser fluence, ambient gas pressure, number of laser shots) for the Excimer Laser treatments. The formation of homogeneous AlN layers after irradiation of aluminum substrates in N2 atmosphere, the synthesis of homogeneous cementite coatings after irradiation of iron substrates in CH4 atmosphere and the successful incorporation of carbon after irradiation of (100) and (111) silicon single crystals in methane gas will be reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 780: Symposium Y – Advanced Optical Processing of Materials , 2003 , Y5.8
Copyright
Copyright © Materials Research Society 2003

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References

references

1. Schaaf, P., Prog. Mat. Sci. 47, 1 (2002)Google Scholar
2. Carpene, E., PhD Thesis, http://webdoc.sub.gwdg.de/diss/2003/carpene/index.html, Göttingen (2002).Google Scholar
3. Carpene, E., Schaaf, P., Han, M., Lieb, K.-P., and Shinn, M. Appl. Surf. Sci. 186, 195 (2002)Google Scholar
4. Schaaf, P., Han, M., Lieb, K.P., Carpene, E., Appl. Phys. Lett. 80, 1091 (2002)Google Scholar
5. Uhrmacher, M., Pampus, K., Bergmeister, F.J., Purschke, D. and Lieb, K.P., Nucl. Instr. Meth. B 9, 234 (1985)Google Scholar
6. Osipowicz, T., Lieb, K.P. and Brüssermann, S., Nucl. Instr. Meth. B 18, 232 (1987)Google Scholar
7. Bäuerle, D., Laser Processing and Chemistry, Springer, Heidelberg (2000).Google Scholar
8. Carpene, E. and Schaaf, P., Appl. Phys. Lett. 77, 2412 (2000)Google Scholar
9.“Binary Alloy Phase Diagrams”, eds. Massalski, T. B., Okamoto, H., Subramanian, P. R. and Kacprzak, L., ASM International, Ohio (1996).Google Scholar
10. Carpene, E. and Schaaf, P., Phys. Rev. B 65, 2244111 (2002)Google Scholar
11. Carpene, E., Flank, A.M., Traverse, A. and Schaaf, P., J. Phys. D: Appl. Phys. 35, 1428 (2002)Google Scholar
12. Carpene, E., Kahle, M., Han, M. and Schaaf, P., in: “Materials Science in Atomic Scale by Mössbauer Spectroscopy”, eds. Miglierini, M., Mashlan, M. and Schaaf, P., NATO Science Series II: Mathematics, Physics and Chemistry, Vol. 94, pag.177, Kluwer Academic Publishers, Dordrecht (2003).Google Scholar
13. Carpene, E. and Schaaf, P., Appl. Phys. Lett. 80, 891 (2002)Google Scholar
14. Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B. andBurns, M., J. Appl. Phys. 76, 1363 (1994)Google Scholar