Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-10-28T00:34:34.979Z Has data issue: false hasContentIssue false

Pulsed Laser Deposition of Poly(Tetrafluoroethylene) Films

Published online by Cambridge University Press:  15 February 2011

D.L. Kjendal
Affiliation:
Department of Electrical Engineering, University of South Alabama, Mobile, AL 36688
Ashok Kumar
Affiliation:
Department of Electrical Engineering, University of South Alabama, Mobile, AL 36688
R.B. Inturi
Affiliation:
Department of Metallurgical and Materials Engineering and the Center for Materials Information Technology, University of Alabama, Tuscaloosa, AL 35487-0202
J. A. Barnard
Affiliation:
Department of Metallurgical and Materials Engineering and the Center for Materials Information Technology, University of Alabama, Tuscaloosa, AL 35487-0202
Get access

Abstract

Thin films of poly(tetrafluoroethylene) have been deposited on amorphous (7059 Corning Glass) and silicon(l00) substrates at various temperatures by the Pulsed Laser Deposition technique. The deposition was carried out at high vacuum (˜10-6 torr)at temperatures ranging from room temperature to 350°C. The mechanical properties of these films at the varying process temperatures have been evaluated by nano-indentation techniques and compositional properties of the films have been characterized by Fourier Transform Infrared spectroscopy. The deposition parameters have been optimized in order to produce good quality films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Seymour, R.B., Engineering Polymer Sourcebook. (McGraw-Hill Publishing Company, New York, 1990), pp.213222.Google Scholar
2 Cotts, D.B., and Reyes, Z., Electrically Conductive Organic Polymers for Advanced Applications, (Noyes Data Corporation, Park Ridge, New Jersey, 1986), pp. 1158, 148–149.Google Scholar
3 Goodwin, P.M., and Otis, C.E., J. Appl. Phys. 69 (4), 2584 (1991).Google Scholar
4 Dickenson, J.T., Shin, J., Jiang, W, and Norton, M.G., J. Appl. Phys. 74 (7) 4729 (1993).Google Scholar
5 Blanchet, G.B., and Shah, S.I., Appl Phys. Lett. 62 (9), 1026 (1993).Google Scholar
6 Jiang, W., Norton, M.G., Tsung, L., and Dickenson, J.T., J Mater Res 10 (4), 1038 (1995).Google Scholar
7 Oliver, W.C., and Pharr, G.M., J. Mater. Res., 7, 1564 (1992).Google Scholar
8 Davis, C.R., Snyder, R.W., Egitto, F.D., D'Couto, G.C., and Babu, S.V., J. Appl. Phys. 76 (5), 3049 (1994).Google Scholar
9 Lucas, and Oliver, W.C., Mater Res Soc. Symp. Proc. 356, 645 (1994)Google Scholar