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Pulsed Laser Deposition of Gallium Nitride on Sapphire

Published online by Cambridge University Press:  10 February 2011

V. Talyansky ,
R. D. Vispute ,
R. P. Sharma ,
S. Choopun ,
M. J. Downes ,
T. Venkatesan ,
Y. X. Li ,
L. G. Salamanca-Riba ,
M. C. Wood  and
R. T. Lareau
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V. Talyansky
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, [email protected]
R. D. Vispute
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, [email protected]
R. P. Sharma
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, [email protected]
S. Choopun
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, [email protected]
M. J. Downes
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, [email protected]
T. Venkatesan
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742, [email protected]
Y. X. Li
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742
L. G. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742
M. C. Wood
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-DB, Fort Monmouth, N.J. 07703
R. T. Lareau
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-DB, Fort Monmouth, N.J. 07703
K. A. Jones
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-DB, Fort Monmouth, N.J. 07703
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Abstract

We have fabricated high quality single crystalline GaN films on sapphire (0001) substrates using pulsed laser deposition. Our best GaN films on sapphire (0001) featured the FWHM of the GaN (002) peak rocking curve of 7 arcmin, the RBS minimum yield of only 3%, and the energy gap width of 3.4 eV. The effect of the deposition temperature on the crystalline quality of the films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 99
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Nakamura, S., Harada, Y., and Seno, M., Appl. Phys. Lett. 58, 2021 (1991).Google Scholar
2. Kung, P., Saxler, A., Zhang, X., Walker, D., Wang, T. C., Ferguson, I., and Razeghi, M., Appl. Phys. Lett. 66, 2958 (1995).Google Scholar
2. Kim, W., Aktas, O., Botchkarev, A.E., Salvador, A., Mohammad, S.N., and Morkoc, H., J. Appl. Phys. Lett. 79, 7657 (1996).Google Scholar
4. Powell, R.C., Lee, N.-E., Kim, Y.-W., and Greene, J.E., J. Appl. Phys. 73, 189 (1993).Google Scholar
5. Yang, Z., Li, L.K., and Wang, W.I., Appl. Phys. Lett. 67, 1686 (1995).Google Scholar
6. Paisley, M.J., and Devis, R.F., J. Crystal growth 162, 537 (1990).Google Scholar
7. Morkoc, H., Strite, S., Gao, G. B., Lin, M.E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994), and references therein.Google Scholar
8. “GaN and Related Materials for Device Applications”, Materials Research Society Bulletin, 22, 1997, and references therein.Google Scholar
9. Molnár, R.J., Singh, R., and Moustakas, T.D., Appl. Phys. Lett. 66, 268 (1995).Google Scholar
10. ”Pulsed laser deposition of thin films”, Eds. Chrisey, D. and Hubler, G., Wiley-Interscience, New York, 1994, and references therein.Google Scholar
11. Leuchtner, R. E., Block, W., Li, Y., and Hristacos, L., 1995 Fall MRS meetingGoogle Scholar
12. Xiao, R.-F., Sun, X.W., Liao, H.B., Cue, N., and Kwok, H.S., J. Appl. Phys. 80, 4226 (1996).Google Scholar
13. Vispute, R.D., Wu, H. and Narayan, J., Appl. Phys. Lett. 67, 1549 (1995).Google Scholar
14. Talyansky, V., Sharma, R. P., Choopun, S., Downes, M., Venkatesan, T., Li, Y. X., Salamanca-Riba, L. G., Wood, M. C., and Jones, K. A., submitted to J. Appl. Phys.Google Scholar
15. Vispute, R. D., Talyansky, V., Sharma, R. P., Choopun, S., Downes, M., Venkatesan, T., Jones, K.A., Iliadis, A. A., Khan, M. A., and Yang, J. W., accepted to Appl. Phys. Lett.Google Scholar
16. Qian, W., Skowronski, M., Graef, M.D., Doverspike, K., Rowland, L.B., and Gaskill, D.K., Appl. Phys. Lett. 66, 1252 (1995).Google Scholar