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Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

Published online by Cambridge University Press:  15 February 2011

See-Hyung Lee ,
Tae W. Noh ,
Jai-Hyung Lee  and
Young-Gi Kim
See-Hyung Lee
Affiliation:
Department of Physics, Seoul National University, Seoul 151–742, Korea.
Tae W. Noh
Affiliation:
Department of Physics, Seoul National University, Seoul 151–742, Korea.
Jai-Hyung Lee
Affiliation:
Department of Physics, Seoul National University, Seoul 151–742, Korea.
Young-Gi Kim
Affiliation:
System Development Center, Korea Telecom Research Laboratories, Seoul 137–792, Korea.
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Abstract

Pulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 575
Copyright
Copyright © Materials Research Society 1995

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References

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