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Pulsed Laser Deposition of Epitaxial (110) Tin Films on (100) Gaas - Processing, Characterization and Modeling

Published online by Cambridge University Press:  15 February 2011

Tsvetanka Zheleva ,
K. Jagannadham ,
N. Biunno  and
J. Narayan
Tsvetanka Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
N. Biunno
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
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Abstract

Epitaxial (110) titanium nitride films have been grown on (100) GaAs by pulsed laser deposition technique. The film quality has been found to be a strong function of the processing parameters. The films have been characterized using four point probe resistivity technique, Raman spectroscopy, X-ray diffraction analysis, and transmission electron Microscopy. Single crystal films were obtained at the deposition temperature 450° C and the room temperature resistivity was found to be 49.7 ΜΩ-cm. The epitaxial orientation relationship of the TiN films with the substrate is given by [001]TiN//[110] GaAs and [īlO]TiN// [līO]GaAs. Modeling studies have been performed to characterize the domain epitaxial growth in these large mismatch systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 205
Copyright
Copyright © Materials Research Society 1994

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References

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