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Pulsed Laser Deposition of Bi- And Sb-based Solid Solutions and Multilayer Structures

Published online by Cambridge University Press:  01 February 2011

Arik G. Alexanian ,
Hovsep N. Avetisyan ,
Karapet E. Avjyan ,
Nikolay S. Aramyan ,
Garegin A. Aleksanyan ,
Romen P. Grigoryan ,
Ashot M. Khachatryan  and
Arsham S. Yeremyan
Arik G. Alexanian
Affiliation:
Department of Semiconductor Electronics, Institute of Radiophysics & Electronics of National Acad. Sci. of Armenia, 1 Brs. Alikhanyan st., 378410, Ashtarak, Armenia
Hovsep N. Avetisyan
Affiliation:
Institute for Physical Research of National Acad. Sci. of Armenia, 378410, Ashtarak, Armenia
Karapet E. Avjyan
Affiliation:
Department of Semiconductor Electronics, Institute of Radiophysics & Electronics of National Acad. Sci. of Armenia, 1 Brs. Alikhanyan st., 378410, Ashtarak, Armenia
Nikolay S. Aramyan
Affiliation:
Department of Semiconductor Electronics, Institute of Radiophysics & Electronics of National Acad. Sci. of Armenia, 1 Brs. Alikhanyan st., 378410, Ashtarak, Armenia
Garegin A. Aleksanyan
Affiliation:
Department of Semiconductor Electronics, Institute of Radiophysics & Electronics of National Acad. Sci. of Armenia, 1 Brs. Alikhanyan st., 378410, Ashtarak, Armenia
Romen P. Grigoryan
Affiliation:
Yerevan Physics Institute, 2 Brs. Alikhanyan st., 375036, Yerevan, Armenia
Ashot M. Khachatryan
Affiliation:
Department of Semiconductor Electronics, Institute of Radiophysics & Electronics of National Acad. Sci. of Armenia, 1 Brs. Alikhanyan st., 378410, Ashtarak, Armenia
Arsham S. Yeremyan
Affiliation:
Department of Semiconductor Electronics, Institute of Radiophysics & Electronics of National Acad. Sci. of Armenia, 1 Brs. Alikhanyan st., 378410, Ashtarak, Armenia
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Abstract

Thin films of Bi, Sb, solid solutions Bi1-xSbx, as well as multilayer structures Bi-Sb-Bi-Sb--from elementary sources were produced by pulsed laser deposition for optoelectronic applications. KBr crystals were used as substrates. The solid solutions Bi1-xSbx were obtained by co-evaporation of single targets of Bi and Sb. Structural investigations show that the performance of produced films depends on both the amount of material deposited per pulse of laser energy and the ratio of this amount for bismuth and antimony. Based on this the technological regimes of growth temperature and laser intensity ranges were determined in which single-crystalline growth of films with certain x is possible. Single-crystalline films of Bi1-xSbx were obtained in the range of x (0.12—0.48), which corresponds to semiconductor state of this solution. The method of sequential deposition is used for fabrication of multilayer structures Bi/Sb with quantum-confined layers of bismuth. The growth regime with practically excluded interdiffusion of materials is found. Results of spectral investigations are shown to be in agreement with the theoretically predicted semimetal-to-semiconductor transition of bismuth as a result of quantum confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z2.9
Copyright
Copyright © Materials Research Society 2004

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References

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