Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-23T18:11:22.699Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Laser Deposition as a Novel Growth Technique of Multiferroic LuFe2O4 Thin Films

Published online by Cambridge University Press:  31 January 2011

Jason Rejman ,
Tara Dhakal ,
Pritish Mukherjee ,
Hariharan Srikanth  and
Sarath Witanachchi
Jason Rejman
Affiliation:
[email protected], University of South Florida, Physics, Tampa, Florida, United States
Tara Dhakal
Affiliation:
[email protected], University of South Florida, Physics, Tampa, Florida, United States
Pritish Mukherjee
Affiliation:
[email protected], University of South Florida, Physics, Tampa, Florida, United States
Hariharan Srikanth
Affiliation:
[email protected], University of South Florida, Physics, Tampa, Florida, United States
Sarath Witanachchi
Affiliation:
[email protected], University of South Florida, Physics, 4202 East Fowler Ave., Tampa, Florida, 33620, United States, 813 974 2789
Get access

Abstract

Growth of polycrystalline Lutetium Iron Oxide via pulsed laser deposition in thin film form is reported for the first time herein, and the multiferroic LuFe2O4 phase is stabilized. Fluence and pressure dependent phase growth is demonstrated, along with crystalline structure in vacuum (˜10-5 torr) conditions. Thermodynamic considerations at the laser-target interaction were investigated, as well as at the plume-substrate interface, which reveal that the necessary Gibbs free energy is available in the optimized growth environment to allow formation of the LuFe2O4 polycrystalline phase. The resulting growth rate is found to be related to the Gibbs free energy and concentration of nucleation sites on the substrate. Characterization of the multiferroic aspect of LuFe2O4 entailed direct measurement of the ferroelectricity in the thin film, as well as magnetic behavior, both at various temperatures. In particular, the ferroelectric polarization vs. voltage data yield values of 0.61 μC/cm2 at 300 K to 3.29 μC/cm2 at 183 K; moreover, these data are in agreement with those reported in the literature. Magnetization vs. applied field data shows the magnetization at 300 K to be 180 emu/cm3 and increasing to 200 emu/cm3 at 10 K.

Keywords

laser ablationmagnetic propertiesthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F03-22
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Chopra, K.L., Thin Film Phenomena, McGraw-Hill Book Company, New York, pp. 83–130 (1969).Google Scholar
[2] Lowndes, D., Hyperthermal Pulsed-Laser Ablation for Film Deposition and Surface Microstructural Engineering, Solid State Division, Oak Ridge National Laboratory, TN; Dept. of Materials Science and Eng., U. of Tennessee, Knoxville.Google Scholar
[3] Marezio, M., Remeika, J.P., Dernier, P.D., Acta Crystallogr., Sec. B, volume 26 (1970) 2008.Google Scholar
[4] Jackson, J.D., Classical Electrodynamics, John-Wiley & Sons, Inc., New York, Chap. 2 pp. 77 (1994).Google Scholar
[5] Yang, W., Vispute, Rf. D., Choopun, R. P. Sharma, Shen, H., and Venkatesan, T., Mat. Res. Soc. Symp. Proc., 648 P11.25.1 (2001).Google Scholar
[6] Chrisey, D. B., Hubler, G. K., Pulsed Lased Deposition of Thin Films, John-Wiley & Sons, Inc., New York, Chap. 8, (1994).Google Scholar
[7] Kimizuka, N., Yamamoto, A., Ohashi, H., Sugihara, T., Sekine, T., J. Solid State Chem. 49 65 (1983).Google Scholar
[8] Koivusaari, K.J., Levoska, J., Leppavuori, S., J. Appl. Phys. 85 5 2915 (1998).Google Scholar
[9] Aden, M., Kreutz, E.W., Voss, A., J. Appl. Phys. D, 26 1545–1553 (1993).Google Scholar
[10] Strikovski, M., Miller, J. Jr , Appl. Phys. Lett., 73, 12, 1733 (1998).Google Scholar
[11] Pennycook, S. J., Chisolm, M. F., Jesson, D. E., Feenstra, R., Zhu, S., Zheng, X. Y., and Lowndes, D. J., Physica C 202, 1 (1992).Google Scholar
[12] Findikogly, A. T., Doughty, C., Anlage, S.M., Li, Qi, Xi, X. X., and Venkatesan, T., J. Appl. Phys., 76, 2937 (1994).Google Scholar
[13] Wu, X.D., Inam, A., Venkatesan, T., Chang, C.C., Chase, E. W, Barboux, P., Tarascon, J.M., and Wilkens, B., Appl. Phys. Lett., 52, 745 (1998).Google Scholar
[14] Sekine, T., Katsura, T., J. Solid State Chem. 17, 49 (1976).Google Scholar
[15] Isobe, M., Kimizuka, N., Iida, J., Takekawa, S., Acta Crystallogr., Sec. C, 46, 1917 (1990).Google Scholar
[16] Gschneider, Eyring, Handbook on the Physics and Chemistry of Rare Earth Materials, North-Holland Elsevier Science Publishers B.V., The Netherlands, (1990).Google Scholar
[17] Ikeda, Naoshi, Ohsumi, Hiroyuki, Ohwada, Kenji, Ishii, Kenji, Inami, Toshiya, Kakurai, Kazuhisa, Murakami, Youichi, Yoshii, Kenji, Mori, Shigeo, Horibe, Yoichi & Kito, Hijiri, Nature, 436, 1136–1138 (2005).Google Scholar
[18] Iida, J., Tanaka, M., Nakagawa, Y., Funahashi, S., Kimizuka, N., Takekawa, S., Jour. Physical Soc. of Japan, 62 No. 5, 1723–1735 (1993).Google Scholar