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Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

Published online by Cambridge University Press:  26 February 2011

P. Thiyagarajan ,
M. Kottaismay  and
M S Ramachandra Rao
P. Thiyagarajan
Affiliation:
[email protected], Indian Institute of Technology Madras,, Physics, Departmemt of Physics and MAterials Science Research centre, Chennai, 600 036, India
M. Kottaismay
Affiliation:
[email protected], Indian Institute of Technology Madras, Chennai, 600 036, India
M S Ramachandra Rao
Affiliation:
[email protected], Indian Institute of Technology Madras, Chennai, 600 036, India
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Abstract

Structural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

Keywords

ablationluminescenceabsorption
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 988: Symposium QQ – Solid-State Chemistry of Inorganic Materials VI , 2006 , 0988-QQ06-12
Copyright
Copyright © Materials Research Society 2007

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