Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T17:32:41.335Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Laser Annealing of Ion Implanted Ge

Published online by Cambridge University Press:  15 February 2011

O. W. Holland ,
J. Arayan ,
C. W. White  and
B. R. Appleton
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Arayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
Get access

Abstract

Ion backscattering/channeling and transmission electron microscopy (TEM) were used to investigate the annealing behavior of ion implanted Ge single crystals using a Q-switched ruby laser. The impurities studied were Bi, In, Sb and Pb, which were implanted at liquid nitrogen temperature into both (100) and (111) crystal orientations. A rather unique damage structure which can form during room temperature implantation of Ge is discussed. Maximum substitutional concentrations, which far exceed the retrograde maxima, are reported for all the dopants studied in (100)Ge. The maximum concentrations were limited by an interfacial instability during epitaxial growth following laser irradiation which led to the formation of a well-defined cellular structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 297
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

REFERENCES

1.Narayan, J., Young, R. T. and White, C. W., J. Appl. Phys. 49, 3912 (1978).Google Scholar
2.Baeri, P., Campisano, S. U., Foti, G. and Rimini, E., Appl. Phys. Lett. 32, 137 (1978).Google Scholar
3.White, C. W., Christie, W. H., Appleton, B. R. and Pronko, P. P., Appl. Phys. Lett. 33, 662 (1978).Google Scholar
4.White, C. W., Wilson, S. R., Appleton, B. R. and Narayan, J., p. 124 in Laser and Electron Beam Processing of Materials, ed. by White, C. W. and Peercy, P. S., Academic Press, New York, 1980.Google Scholar
5.Cullis, A.G., Poate, J.M. and Celler, G.K., p. 311 in Laser-Solid Interactions and Laser Processing, ed. by Ferris, S. D., Leamy, H. J. and Poate, J. M., AIP, New York, 1979.Google Scholar
6.White, C. W., Narayan, J., Appleton, B. R. and Wilson, S. R., J. Appl. Phys. 50, 2967 (1979).Google Scholar
7.White, C. W., Wilson, S. R., Appleton, B. R. and Young., F. W. Jr., J. Appl. Phys. 51, 738 (1980).Google Scholar
8.Narayan, J. and White, C. W., p. 65 in Laser and Electron Beam Processing of Materials, ed. by White, C. W. and Peercy, P. S., Academic Press, New York, 1980.Google Scholar
9.Appleton, B. R., Holland, O. W., Narayan, J., Schow, O. E. III, Williams, J. S., Short, K. T. and Lawson, E., Appl. Phys. Lett. 41, 711 (1982)Google Scholar
9a and Holland, O. W., Appleton, B. R. and Narayan, J., J. Appl. Phys. (submitted).Google Scholar
10.Trumbore, F., Bell Syst. Tech. Jour. 39, 205 (1960).Google Scholar
11.Cullis, A. G., Webber, H. C., Poate, J. M. and Simons, A. L., Appl. Phys. Lett. 36, 320 (1980).Google Scholar
12.Baeri, P., Foti, G., Poate, J. M., Campisano, S. U. and Cullis, A. G., Appl. Phys. Lett. 38, 800 (1981).Google Scholar
13. See paper by Gilmer, G. H. in these proceedings.Google Scholar
14.Cahn, J. W., Coriell, S. R. and Boettinger, W. J., p. 89 in Laser and Electron Beam Processing of Materials, ed. by White, C. W. and Peercy, P. S., Academic Press, New York, 1980.Google Scholar