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Pulsed Laser Annealing Effects in High Dose Rate Silicon Implants

Published online by Cambridge University Press:  15 February 2011

J.S. Williams ,
A. P. Pogany ,
D. G. Beanland ,
D. J. Chivers ,
M. J. Kenny ,
A. Rose  and
M. D. Scott
J.S. Williams
Affiliation:
R.M.I.T. Melbourne, 3000, Australia.
A. P. Pogany
Affiliation:
R.M.I.T. Melbourne, 3000, Australia.
D. G. Beanland
Affiliation:
R.M.I.T. Melbourne, 3000, Australia.
D. J. Chivers
Affiliation:
Harwell Research Laboratories, Didcot, England.
M. J. Kenny
Affiliation:
AAEC Research Establishment, Lucas Heights, Australia.
A. Rose
Affiliation:
AAEC Research Establishment, Lucas Heights, Australia.
M. D. Scott
Affiliation:
AAEC Research Establishment, Lucas Heights, Australia.
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Abstract

High resolution Rutherford backscattering and channelling TEM and electrical measurements have been employed to investigate pulsed-ruby laser annealing effects in high dose rate ion implanted silicon wafers. The laterally non-uniform, part amorphous, part crystalline disordered structure which can result from high dose rate implants has been utilized to investigate the selective removal of amorphous or crystalline damage at near-threshold laser powers. Evidence is found for preferrential recrystallisation of amorphous damage regions over a broad laser power window which is below the threshold power required to melt adjacent crystalline silicon. At laser power levels above the crystalline-to-melt threshold, excellent uniformity in damage removal and electrical properties were obtained over the entire wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 169
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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