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Pulsed Lasek Atom Probe Analysis of Stoichiometry Variations in GaAlAs
Published online by Cambridge University Press: 26 February 2011
Abstract
The recent development of Pulsed Laser Atom Probe (PLAP) analysis has allowed routine analysis of the composition of a wide range of semiconducting materials. This paper presents results on the analysis of stoi chiometry variations in MOCVü GaAlAs layers demonstrating that accurate analysis of aluminium concentration fluctuations can be achieved with this technique.
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- Copyright © Materials Research Society 1986