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Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

Published online by Cambridge University Press:  25 February 2011

J. O. Olowolafe  and
R. Fastow
J. O. Olowolafe*
Affiliation:
Department of Materials Science, Cornell University Ithaca, New York 14853
R. Fastow
Affiliation:
Department of Materials Science, Cornell University Ithaca, New York 14853
*
*Department of Physics, University of lie, Ile-Ife, Nigeria
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Abstract

Thin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 553
Copyright
Copyright © Materials Research Society 1985

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References

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