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Pulsed Ion Beam Interface Melting of Ptcr and Crta Alloys on Si Structures

Published online by Cambridge University Press:  15 February 2011

C. J. Palmstrom  and
R. Fastow
C. J. Palmstrom
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
R. Fastow
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
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Abstract

Composition profiles of thermal and pulsed ion beam annealed PtCr/Si and CrTa/Si have been determined using Rutherford backscattering analysis. Thermal annealing resulted in layered phase separation with Pt-silicide in the PtCr/Si case, and CrSi 2 in the CrTa/Si case, forming at the Si surface. Pulsed ion beam annealing, 300–380 keV protons at energy densities ~0.75–1.6 J/cm2 , produced interface melting with no layered phase separation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 715
Copyright
Copyright © Materials Research Society 1983

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References

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