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Pulsed Inductive Plasma Processing for Amorphous Thin Film Formation

Published online by Cambridge University Press:  25 February 2011

Kenji Ebihara  and
Sadao Maeda
Kenji Ebihara
Affiliation:
Department of Electrical Engineering and Computer Science Kumamoto University, Kurokami, Kumamoto 860, Japan
Sadao Maeda
Affiliation:
Department of Electrical Engineering and Computer Science Kumamoto University, Kurokami, Kumamoto 860, Japan
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Abstract

A pulsed electromagnetic inductive discharge is used to prepare amorphous thin films. The pulsed plasma is generated by supplying pulsed current (maximum peak 70 kA, period 13 μs ) to a one-turn coil wound round a Pyrex glass tube. Amorphous silicon(a-Si) and amorphous carbon (a-C) films were deposited in mixture gas (20% SiH4, 80% Ar) and pure methane, respectively. The films formed on the subltrates set normal to the tube axis at a pressure of 10–200mTorr and a gas flow rate of 10–20 sccm. Deposition rate was about 1 nm per a single discharge shot. The deposited films of a few hundred nanometer thickness adhered well to room-temperature substrates. The a-Si films had optical gap of ˜ 1.7 eV. The a-C films were transparent in the IR range and had optical gap of 1.0 ˜ 2.0 eV. Relative spectral intensity measurement of the Balmer emission from hydrogen atoms showed that the electron temperature at the high electromagnetic compression phase is 1˜ 2 eV in silane discharges and 2˜5 eV in methane discharges.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 249
Copyright
Copyright © Materials Research Society 1987

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References

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