Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Yun, F
Reshchikov, M.A
Jones, K
Visconti, P
Morkoç, H
Park, S.S
and
Lee, K.Y
2000.
Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy.
Solid-State Electronics,
Vol. 44,
Issue. 12,
p.
2225.
Xu, Dapeng
Yang, Hui
Li, S.F
Zhao, D.G
Ge, H
and
Wu, R.H
2000.
Pulsed excimer laser annealing of Mg-doped cubic GaN.
Journal of Crystal Growth,
Vol. 209,
Issue. 1,
p.
203.
Visconti, P.
Reshchikov, M. A.
Jones, K. M.
Yun, F.
Cingolani, R.
Morkoç, H.
Jasinski, J.
Swider, W.
Liliental-Weber, Z.
Park, S. S.
and
Lee, K. Y.
2001.
Characterization of very low defect-density free-standing GaN Substrate Grown by Hydride-Vapor-Phase-Epitaxy..
MRS Proceedings,
Vol. 680,
Issue. ,
Sands, T. D.
Wong, W. S.
and
Cheung, N. W.
2004.
Wafer Bonding.
Vol. 75,
Issue. ,
p.
377.
Chu, Y.H.
Lin, S.J.
Liu, K.S.
and
Lin, I.N.
2005.
Low-temperature laser processes for synthesizing (100)-textured Pb(Zr,Ti)O3 thin films on Si substrate.
Applied Physics A,
Vol. 81,
Issue. 5,
p.
1059.
Wang, X.C.
Lim, G.C.
Liu, W.
Soh, C.B.
and
Chua, S.J.
2005.
Effects of 248nm excimer laser irradiation on the properties of Mg-doped GaN.
Applied Surface Science,
Vol. 252,
Issue. 5,
p.
2071.
Ueda, Tetsuzo
Ishida, Masahiro
and
Yuri, Masaaki
2011.
Separation of Thin GaN from Sapphire by Laser Lift-Off Technique.
Japanese Journal of Applied Physics,
Vol. 50,
Issue. 4R,
p.
041001.
Wang, Grace Huiqi
Wong, Ting-Chong
Wang, Xin-cai
Zheng, Hong-Yu
Chan, Taw-Kuei
Osipowicz, Thomas
Foo, Yong-Lim
and
Tripathy, Sudhiranjan
2011.
Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation.
Japanese Journal of Applied Physics,
Vol. 50,
Issue. 4S,
p.
04DF06.