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Pulsed Esr Study of Light-Induced Metastable Defects in 17O and 13C Incorporated a-Si:H
Published online by Cambridge University Press: 10 February 2011
Abstract
Hydrogenated amorphous silicon (a-Si:H) samples containing 17O (3 x 1019 cm-3, nuclear spin, I, = 5/2) and 13C (3 - 4 x 1017cm-3, I = 1/2) isotope impurities were used in the detailed pulsed electron spin resonance (ESR) and pulsed electron-nuclear double resonance (ENDOR) measurements to obtain information on the role of O and C impurities in lightinduced metastable dangling bonds in a-Si:H. No hyperfine structure related to 17O and 13C atoms was observed in echo detected ESR, electron spin echo envelope modulation (ESEEM) of pulsed ESR as well as pulsed ENDOR (Davies and Mims sequences), which suggests that O and C impurities are not directly involved in the formation of light-induced dangling bonds.
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