Hostname: page-component-68945f75b7-w588h Total loading time: 0 Render date: 2024-09-05T02:34:38.827Z Has data issue: false hasContentIssue false

PtIn2 ohmic contacts to n-GaN

Published online by Cambridge University Press:  10 February 2011

D. B. Ingerly
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706–1595
Y. A. Chang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706–1595
N. R. Perkins
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, Wisconsin 53706–1691
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, Wisconsin 53706–1691
Get access

Abstract

A new metallization scheme has been developed to form ohmic contacts to n-GaN. Contacts were fabricated by sputtering the intermetallic compound, PtIn2 on n-GaN (n ∼ 5 ×l017 cm−3) grown by metalorganic vapor phase epitaxy (MOVPE) with some of the contacts subjected to rapid thermal annealing. Contacts in the as-deposited state exhibited nearly ohmic behavior with a specific contact resistance of 1.2 × 10−2 Ω cm2. Contacts subjected to rapid thermal annealing at 800 °C for 1 minute exhibited linear current-voltage characteristics and a decrease in contact resistance. To rationalize the reaction at the contact interface the phase diagram of the PtIn2-PtGa2-InN-GaN reciprocal system at 800 °C was calculated based on known and estimated thermodynamic values. This phase diagram suggests that there will be a solid state exchange of In and Ga atoms at the Ptln2/GaN contact interface producing (InxGa1-x)N and Pt(In,Ga)2. Results from Auger depth profiling used to examine the Ptln2/n-GaN contacts are consistent with this estimated phase diagram information. It is proposed that the formation of (InxGa1-x)N at the contact interface is responsible for the ohmic behavior of Ptln2 contacts.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Botchkarev, A., Salvador, A., Sverdlov, B., Myoung, J. and Morkoc, H., J. Appl. Phys. 77(9), 4455 (1995)Google Scholar
2. Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76(3), 1363 (1994)Google Scholar
3. Nakamura, S., Senoh, M., Naghama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L217 (1996)Google Scholar
4. Banari, S. C., Rowland, L. B., Kruppa, W., Kelner, G., Doverspike, K., and Gaskill, D. K., Electron. Lett. 30(15), 1248 (1994)Google Scholar
5. Asif Khan, M., Bhattarai, A. R., Kuznia, J. N. and Olson, D. T., Appl. Phys. Lett 63, 1214 (1993)Google Scholar
6. Foresi, J. S. and Moustakas, T. D., Appl. Phys. Lett. 62(22), 2859 (1993)Google Scholar
7. Fan, Z., Noor Mohmmad, S., Kim, W., Aktas, O., Botchkarev, A. E. and Morkoc, H., Appl. Phys. Lett. 68(12), 1672 (1996)Google Scholar
8. Okamoto, H., in Massalski, T. B. (ed.), Binary Alloy Phase Diagrams, ASM International, Materials Park, OH, 2276 (1990) 2nd editionGoogle Scholar
9. Reeves, G. K., Solid-State Electron. 23, 487 (1980)Google Scholar
10. Chen, D. Y., Chang, Y. A. and Swenson, D., Appl. Phys. Lett. 68, 96 (1996)Google Scholar
11. Jan, C.-H., Ph.D. Thesis, University of Wisconsin-Madison, (1991)Google Scholar
12. Chang, Y. A., Metall. Mater. Trans. B 25, 789 (1994)Google Scholar
13. Ren, F., Abernathy, C. R., Pearton, S. J., and Wisk, P. W., Appl. Phys. Lett. 64, 1508 (1994)Google Scholar
14. Swenson, D., Ph.D. Thesis, University of Wisconsin-Madison, (1994)Google Scholar
15. Kubaschewski, O., Alcock, C. B. and Spencer, P. J., Materials Thermochemistry, Pergamon Press, Oxford, UK (1993) 6th editionGoogle Scholar