Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T01:53:18.514Z Has data issue: false hasContentIssue false
  • English
  • Français

Proton formation and diffusion in amorphous SiNx:H

Published online by Cambridge University Press:  11 August 2011

H.F.W. Dekkers ,
V. Prajapati ,
S. Van Elshocht  and
E. Vancoille
H.F.W. Dekkers
Affiliation:
FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
V. Prajapati
Affiliation:
SSET, imec, Kapeldreef 75, 3001 Leuven, Belgium.
S. Van Elshocht
Affiliation:
FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
E. Vancoille
Affiliation:
FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
Get access

Abstract

In this work the release of atomic hydrogen from SiNx:H films is investigated. Thermal treatment as well as UV-illumination induces the formation of H2, increasing the tensile stress in the film. N-rich SiNx:H films release hydrogen only by UV-illumination, indicating involvement of charge trapping. Ab initio calculations show a possible reaction path for the release and diffusion of protons that also explain the diffusion of hydrogen into Si substrates.

Keywords

nitridehydrogenationH
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1330: Symposium J – Protons in Solids , 2011 , mrss11-1330-j02-02
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mistry, K., et al. ., Symp. VLSI Tech., pp. 50–51, (2004).Google Scholar
2. Dekkers, H.F.W., Beaucarne, G., Hiller, M., Charifi, H. and Slaoui, A. et al. ., Appl. Phys. Lett. 89, 211914 (2006).Google Scholar
3. Bertoni, M.I., et al. ., Progress in Photovoltaics 19, 187 (2011).Google Scholar
4. Cai, L., Rohatgi, A., Yang, D., and El-Sayed, M. A.. J. Appl. Phys. 80, 5384 (1996)Google Scholar
5. Sheoran, M. et al. ., Appl. Phys. Lett. 92, 172107 (2008).Google Scholar
6. Kleekajai, S., Wen, L., Peng, C., Stavola, M., Yelundur, V., Nakayashiki, K., Rohatgi, A., and Kalejs, J., J. Appl. Phys. 106, 123510 (2009).Google Scholar
7. Herring, C., Johnson, N.M. and Van de Walle, C.G., Phys. Rev. B 64, 125209 (2001).Google Scholar
8. Lu, Z., Santos-Filho, P., Stevens, G., Williams, M. J., and Lucovsky, G., J. Vac. Sci. Technol. A 13, pp. 607–613 (1995).Google Scholar
9. Verlaan, V., vand der Werf, C.H.M., Arnoldbik, W.M., Goldbach, H.D. and Schropp, R.E.I., Phys. Rev. B 73, 195333 (2006).Google Scholar
10. Maley, N., Phys. Rev. B 46, 2078 (1992).Google Scholar
11. Hughey, M. P. and Cook, R. F., J. Appl. Phys. 97, 114914 (2005).Google Scholar
12. Nemukhin, A. V., Grigorenko, B. L., Granovsky, A. A., Moscow University Chemistry Bulletin 45(2), 75 (2004).Google Scholar
13. Henkelman, G., Uberuaga, B.P. and Jonsson, H., J. Chem. Phys. 113, 9901 (2000).Google Scholar
14. Arnoldbik, W.M., Marée, C.H.M., Maas, A.J.H., van den Boogaard, M.J. and Habraken, F.H.P.M., Phys. Rev B 48, 5444 (1993)Google Scholar