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Proton and Deuteron Double Resonance Studies of Structural Differences Between Amorphous Si and Ge Films

Published online by Cambridge University Press:  01 January 1993

P.H. Chan ,
P.A. Fedders ,
R.E. Norberg ,
W. Paul ,
D. Pang  and
P. Wickboldt
P.H. Chan
Affiliation:
Department of Physics , Washington University, St. Louis, MO 63130
P.A. Fedders
Affiliation:
Department of Physics , Washington University, St. Louis, MO 63130
R.E. Norberg
Affiliation:
Department of Physics , Washington University, St. Louis, MO 63130
W. Paul
Affiliation:
Division of Applied Science , Harvard University, Cambridge, MA 02138
D. Pang
Affiliation:
Division of Applied Science , Harvard University, Cambridge, MA 02138
P. Wickboldt
Affiliation:
Division of Applied Science , Harvard University, Cambridge, MA 02138
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Abstract

Proton and deuteron double resonance methods have been used to study the structure of high quality plasma-deposited a-Si:H,D and a-Ge:H,D films. The micro-structure of the a-Si is dominated by nanovoids with dimension <3 Å while the a-Ge shows many larger microvoids. We have observed new proton HD multiple echoes in the films by using a three pulse sequence double resonance method. The new echoes imply that HD molecules in a-Ge principally are located in large microvoids, which is not the case in high quality a-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 741
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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