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Property Improvement of Mocvd-Pzt Films Deposited Below 400 °C

Published online by Cambridge University Press:  01 February 2011

Hiroshi Funakubo ,
Gouji Asano ,
Atsushi Nagai ,
Hitoshi Morioka ,
Shintaro Yokoyama ,
Tetsuo Shibutami ,
Noriaki Oshima  and
Kensuke Akiyama
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Gouji Asano
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Atsushi Nagai
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Hitoshi Morioka
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Shintaro Yokoyama
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Tetsuo Shibutami
Affiliation:
Tosoh Corporation Tokyo Research Center, 12743–1, Hayakawa, Ayase-shi Kanagawa, Japan
Noriaki Oshima
Affiliation:
Tosoh Corporation Tokyo Research Center, 12743–1, Hayakawa, Ayase-shi Kanagawa, Japan
Kensuke Akiyama
Affiliation:
Kanagawa Industrial Technology Institute, 705–1, Shimoizumi, Ebina-shi, Kanagawa, Japan
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Abstract

RuO2/(200-nm thick PZT)/RuO2 capacitors were prepared by MOCVD. RuO2 and PZT films were prepared at 350, and 395 and 445 °C from DER - O2 and Pb(C11H19O2)2 - Zr(O·t-C4H9)4 - Ti(O·i -C3H7)4 - O2 systems, respectively. Clear hysteresis loops originated to ferroelectricity was observed for the PZT films deposited at 445 °C but was not at 395 °C. However, by the addition of 10-nm thick Pt layer prepared on the RuO2 bottom electrode by e-beam evaporation, ferroelectricity above 30 μC/cm2 in remanent polarization (Pr) was obtained for the PZT films deposited at 395 °C. This shows that the existence of Pt layer improved the crystallinity of PZT phase. This capacitor shows hardly fatigue up to 1 × 1010 switching cycles, suggesting the fatigue free characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C4.3
Copyright
Copyright © Materials Research Society 2004

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References

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