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Properties of Surface States on GaN and Related Compounds and Their Passivation by Dielectric Films

Published online by Cambridge University Press:  11 February 2011

Hideki Hasegawa  and
Tamotsu Hashizume
Hideki Hasegawa
Affiliation:
Research Center for Integrated Quantum Electronics (RCIQE) andGraduate School of Electronics and Information Engineering, Hokkaido University, N-13, W-8, Kita-ku, Sapporo, 060–8628, Japan
Tamotsu Hashizume
Affiliation:
Research Center for Integrated Quantum Electronics (RCIQE) andGraduate School of Electronics and Information Engineering, Hokkaido University, N-13, W-8, Kita-ku, Sapporo, 060–8628, Japan
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Abstract

This paper reviews the authors′ recent efforts to clarify the properties of electronic states near surfaces of GaN and AlGaN by using various in-situ and ex-situ characterization techniques, including UHV contact-less C-V, photoluminescence surface state spectroscopy (PLS3), cathode luminescence in-depth spectroscopy (CLIS),and gateless FET techniques that have been developed by the authors’ group.

As a result, a model including a U-shaped surface state continuum, having a particular charge neutrality level, combined with frequent appearance of near-surface N-vacancy related deep donor states having a discrete level at Ec - 0.37eV is proposed as a unified model that can explain large gate leakage currents and current collapse in AlGaN/GaN HFETs. Hydrogen plasma treatment and SiO2 deposition increase N-vacancy related deep donors. Reasonably good surface passivation can be achieved by ECR-plasma SiNx films and by ECR-plasma oxidized Al2 O3 films both combined with ECR N2 plasma treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L2.6
Copyright
Copyright © Materials Research Society 2003

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References

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