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Properties of silicon films deposited under argon dilution

Published online by Cambridge University Press:  17 March 2011

C. Longeaud ,
D. Roy ,
P. Chaudhuri ,
N. Dutta Gupta ,
P. Pratim Ray ,
S. Vignoli ,
R. Meaudre ,
M. Meaudre  and
L. Saviot
C. Longeaud
Affiliation:
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Supélec, Universités Paris VI et XI, Plateau de Moulon 91190, Gif sur Yvette, France
D. Roy
Affiliation:
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Supélec, Universités Paris VI et XI, Plateau de Moulon 91190, Gif sur Yvette, France
P. Chaudhuri
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta 700 032, India
N. Dutta Gupta
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta 700 032, India
P. Pratim Ray
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta 700 032, India
S. Vignoli
Affiliation:
Département Physique des Matériaux (UMR 5586 CNRS), Université Lyon 1, 43 Bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
R. Meaudre
Affiliation:
Département Physique des Matériaux (UMR 5586 CNRS), Université Lyon 1, 43 Bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
M. Meaudre
Affiliation:
Département Physique des Matériaux (UMR 5586 CNRS), Université Lyon 1, 43 Bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
L. Saviot
Affiliation:
Laboratoire de Physico-Chimie des Matériaux Luminescents (UMR 5620 CNRS), Université Lyon 1, 43 Bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
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Abstract

Four series of samples, prepared at 250° C by decomposition of a mixture of silane and argon in a radio frequency powered deposition systems (rf-PECVD), have been studied. The dilution rates were 1 %, 1.5 %, 5 % and 10 % of silane in argon and the total pressure was 0.5 Torr for the first series and 0.2 Torr for the others. Structural and transport properties of the materials have been studied as function of power density. Structural studies show the transition from purely amorphous material towards microcrystalline material with increasing rf power density. The transport parameters were measured in the as-deposited, light-soaked and annealed states and compared to those obtained on state of the art material. The best material obtained is clearly device grade material. This study shows that argon dilution allows to tailor the material for a given application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A23.1
Copyright
Copyright © Materials Research Society 2001

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References

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