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Properties of Pt/Ti Contacts to III-V Materials

Published online by Cambridge University Press:  25 February 2011

A. Katz ,
S. Nakahara ,
S. N. G. Chu ,
B. E. Weir ,
C. R. Abemathy ,
W. S. Hobson ,
S. J. Pearton  and
W. Savin
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. Nakahara
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
B. E. Weir
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abemathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. Savin
Affiliation:
New Jersey Institute
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Abstract

Pt/Ti contact to variety of binary III-V and related ternary semiconductor materials were established. These contacts were formed by electron beam evaporation and subsequent rapid thermal processing in order to sinter the metal-semiconductor systems. The contacts to p-type InAs, GaAs, In0.53Ga0.43As, In0.52Al0.4As and Ga0.7Al0.3As were ohmic, as a result of heating at temperatures of 450°C or higher. The Pt/Ti contacts to InP and GaP displayed Schottky behavior as-deposited and preserved the rectifying nature through heat treatments, regardless of the processing conditions. The electrical properties and the microstructure evolution in these 7 systems is discussed in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 305
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Singh, R., Thakur, R. P. S., Katz, A., Nelson, A. J., Gebhard, S. C. and Swartzlander, A. B., in Appl. Phys. Lett., 57, 1239 (1990).CrossRefGoogle Scholar
[2] Chu, S. N. G., Katz, A., Boone, T., Thomas, P. M., Riggs, V. G., Dautremont-Smith, W. C. and Johnston, W. D. Jr., J. Appl. Phys., 67, 3754 (1990).CrossRefGoogle Scholar
[3] Katz, A., Weir, B. E., Chu, S. N. G., Thomas, P. M., Soler, M., Boone, T. and Dautremont-Smith, W. C., J. Appl. Phys., 67, 3872 (1990).CrossRefGoogle Scholar
[4] Katz, A., Nakahara, S., Savin, W. and Weir, B. E., J. Appl. Phys., 68,4133 (1990).CrossRefGoogle Scholar
[5] Katz, A., Chu, S. N. G., Weir, B. E., Dautremont-Smith, W. C., Logan, R. A. and Tanbun-EK, T., J. Appl. Phys., to be published.Google Scholar
[6] Katz, A., Abernathy, C. R., Pearton, S. J. and Weir, B. E., J. Appl. Phys., to be published.Google Scholar
[7] Pearton, S. J. and Caruso, R., J. Appl. Phys., 67 (1989).Google Scholar
[8] Katz, A., Thomas, P. M., Chu, S. N. G., Dautremont-Smith, W. C., Sobers, R. G. and Napholtz, S. G., J. Appl. Phys., 67, 884 (1990).CrossRefGoogle Scholar
[9] See for example Woodal, J., Braslan, N. and Freeouf, J. L., in “Physics of Thin Films”, Ed. by Francombe, M. H. and Vossen, J. L. (Academic Press Inc., New York, 1987), 199–225.Google Scholar
[10] Katz, A. and Dautremont-Smith, W. C., J. Appl. Phys., 67, 6237 (1990).CrossRefGoogle Scholar
[11] Katz, A. and Nakahara, S., unpublished results.Google Scholar
[12] Katz, A., Dautremont-Smith, W. C., Chu, S. N. G., Thomas, P. M., Koszi, L. A., Lee, J. W., Riggs, V. G., Brown, R. L., Napholtz, S. G., and Zilko, J. L., Appl. Phys. Lett., 54, 2306 (1989).CrossRefGoogle Scholar
[13] Katz, A., Weir, B. E. and Dautremont-Smith, W. C., J. Appl. Phys., 68, 1123 (1990).CrossRefGoogle Scholar