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Properties of Piezoelectric Pzt Thin Films for Microactuator Applications

Published online by Cambridge University Press:  16 February 2011

D. Damjanovic
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology (EPFL), 1015 Lausanne, Switzerland
K. G. Brooks
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology (EPFL), 1015 Lausanne, Switzerland
A. Kholkin
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology (EPFL), 1015 Lausanne, Switzerland
M. Kohli
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology (EPFL), 1015 Lausanne, Switzerland
T. Maeder
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology (EPFL), 1015 Lausanne, Switzerland
P. Muralt
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology (EPFL), 1015 Lausanne, Switzerland
N. Setter
Affiliation:
Laboratory of Ceramics, Department of Materials, Swiss Federal Institute of Technology (EPFL), 1015 Lausanne, Switzerland
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Abstract

The piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating electric field reveals that extrinsic contributions to the dielectric permittivity become active at large fields. The DC electric field has the effect of freezing out the extrinsic contributions. The influence of the dielectric loss on the piezoelectric properties is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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