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Properties of Ohmic Contacts to Heterojunction Transistors

Published online by Cambridge University Press:  25 February 2011

H. Barry Harrison
H. Barry Harrison*
Affiliation:
School of Microelectronic Engineering, Griffith University, Brisbane, Australia 4111
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Abstract

The electrical and physical properties of the contact between the active channel of high electron mobility transistors (HEMT’s) and the source or drain contacts play an important role in determining the transistor characteristics. This paper considers electrical models that may be applied to the various techniques now available to form these Interconnections. Results of electrical (and some physical) studies with regard to these systems are then discussed and compared where possible with predictions made using the electrical models. The comparisons show that the electrical models provide a useful base to identify the important parameters in these interconnections.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 15
Copyright
Copyright © Materials Research Society 1990

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References

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