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Properties of Large Grain-Size poly-Si Films by Catalytic Chemical Sputtering

Published online by Cambridge University Press:  17 March 2011

Atsushi Masuda ,
Koji Kamesaki ,
Akira Izumi  and
Hideki Matsumura
Atsushi Masuda
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Tatsunokuchi, Ishikawa 923-1292, JAPAN
Koji Kamesaki
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Tatsunokuchi, Ishikawa 923-1292, JAPAN
Akira Izumi
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Tatsunokuchi, Ishikawa 923-1292, JAPAN
Hideki Matsumura
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Tatsunokuchi, Ishikawa 923-1292, JAPAN
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Abstract

Large grain-size polycrystalline Si (poly-Si) films are obtained on glass substrate by newly developed catalytic chemical sputtering method at low temperatures around 400 C. Si films are also epitaxially grown on (100) single-crystalline Si substrates. In the method Si films are deposited by the chemical transport of SiH4 species generated by the reaction between solid Si target and catalytically generated H atoms. Efficient deposition is realized using the remarkable difference in the etch rate depending on Si target temperatures. That is, SiH4 species are efficiently generated on cooled Si target by atomic-H etching and deposited on substrates with suppressed etching phenomena by heating. Full-width at half maximum of transverse-optical Raman signals originating from crystalline phase for the obtained poly-Si films is narrower than that for poly-Si prepared by excimer-laser annealing. It was noticeable that the grain size exceeds 1 m for the films with a thickness of about 1 m. Growth mode of poly-Si films especially in the initial stage is remarkably changed with a difference in the substrate material. It was found that formation of seed layer enhances the growth of poly-Si films on glass substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A4.5
Copyright
Copyright © Materials Research Society 2001

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References

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