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Properties of Interfaces between Superlattice Heterostructures and Uniform Alloy Materials as Realized by Impurity Induced Disordering

Published online by Cambridge University Press:  28 February 2011

R. L. Thornton ,
F. A. Ponce ,
G. B. Anderson  and
H. F. Chung
R. L. Thornton
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
G. B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
H. F. Chung
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
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Abstract

In this paper present experimental results on the quality of AIGaAs material after high concentrations of impurities have been introduced for the purpose of impurity induced disordering. A comparison between Zn and Si diffusion is presented, and the nature of the transition region between uniform alloy and as-grown periodic structure has been characterized both experimentally and theoretically. Device implications of these observations is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 85
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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