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Properties of in Situ Doped Amorphous and Polycrystalline Silicon Deposited by Chemical Vapor Deposition from Tertiarybutylarsine and Tertiarybutylphosph INE

Published online by Cambridge University Press:  25 February 2011

David E. Kotccki ,
Jeffrey L. Blouse ,
Christopher C. Parks  and
Robcrt F. Sarkozy
David E. Kotccki
Affiliation:
IBM, Semiconductor Development Laboratory, Hopewell Junction, NY 12533
Jeffrey L. Blouse
Affiliation:
IBM, Semiconductor Development Laboratory, Hopewell Junction, NY 12533
Christopher C. Parks
Affiliation:
IBM, Semiconductor Development Laboratory, Hopewell Junction, NY 12533
Robcrt F. Sarkozy
Affiliation:
Spirc Corporation, Bedford, MA 01730
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Abstract

Tcrtiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) were evaluated as n-type dopant precursors for low pressure chemical vapor deposition (LPCVD) of in situ doped amorphous and polycrystalline silicon from silanc. The deposition kinetics, film composition, and electrical properties obtained with TBA and TBP dopant precursors are compared to that obtained when using arsine and phosphine as dopant precursors. Compared to the hydride dopant sources, TBA and TBP provide increased safety due to their sub-atmospheric vapor pressure (≃ 200 Torr at 26°C) and lower toxicity. Using mixtures of TBA and TBP with silane and hydrogen, high quality films of arsenic and phosphorus in situ doped amorphous and polycrystalline silicon were obtained. Dopant incorporation levels ranged from 5×1019 to l.5×1021 cm−3 as measured by SIMS. The deposition rate of polycrystallinc films deposited from TBA and TBP was enhanced by a factor of-≃-3X compared to the hydride dopants for the same mole fraction of dopant precursor. The minimum resistivitics of 5.0 and 1.4 mΩ-cm were obtained, following a 1000°C, 30 second rapid thermal anneal, for ≃500Å thick films on SiO2 deposited with TBA and TBP respectively. A drawback of TBA and TBP is the incorporation of ≃1.0 atomic percent carbon which is > 15X higher than obtained when using the hydride dopant sources. Carbon was observed under all deposition conditions examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 295
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Kamins, T., Polycrystalline Silicon for Integrated Circuit Applications, (Kluwer Academic Publishers, Boston, 1988).Google Scholar
2. Trans. Elect. Dev. 36 (12), Special Issue on Amorphous Semiconductor Devices (1989).Google Scholar
3. Eversteyn, F.C. and Put, B.H., J. Electrochem. Soc. 120 (1), 106 (1973).Google Scholar
4. Arienzo, M., Megdanis, A.C., Sackles, P.E. and Michel, A.E., IEEE Trans. Elect. Dev. 33 (10), 1535 (1986).Google Scholar
5. Yu, M.L. and Meyerson, B.S., J. Vac. Sci. Tech. A. 2 (2), 446 (1984).Google Scholar
6. Miller, G.A., Davis, R.A. and Caporossi, J.C., Semiconductor Safety Assoc. Journal, (September, 1990) p. 7.Google Scholar
7. American Cyanamid Company, Application Note 2 (1989).Google Scholar
8. Larsen, C.A., Buchan, N.I., Li, S.H. and Stringfellow, G.B., J. Cryst. Gr. 94, 663 (1989).Google Scholar
9. Li, S.H., Larsen, C.A., Buchan, N.I., and Stringfellow, G.B., J. Electr. Mater. 18 (3), 457 (1989).Google Scholar
10. Omstead, T.R., VanSickle, P.M., Lee, P.W. and Jensen, K.F., J. Cryst. Gr. 93, 20 (1988).Google Scholar
11. Kurtz, S.R., Olson, J.M., and Kibbler, A., J. Elect. Mater. 18 (1), 15 (1989).Google Scholar
12. Kellert, F.G., Whelan, J.S. and Chan, K.T., J. Elect. Mater. 18 (3), 355 (1989).Google Scholar
13. Freeman, D.W., in Proceedings of the 10th International Conference on CVD, (Electrochem. Soc., 1987) p. 457.Google Scholar
14. Pignatel, G.U., Sisson, J.C. and Weiner, W.P., Submitted for publication.Google Scholar
15. Carpenter, G.J.C. and Houghton, D.C., Mat. Res. Soc. Symp. Proc., 31, 255 (1984).Google Scholar
16. Kotecki, D.E., Blouse, J.L., Parks, C.C., Seshan, K. and Lee, M.A., To be publishedGoogle Scholar