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Properties of DX Centers in AlxGa1−xAs and Effects on Heterojunction Devices

Published online by Cambridge University Press:  16 February 2011

P. M. Mooney
P. M. Mooney*
Affiliation:
IBM Research Division, T.J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598 USA
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Abstract

In this paper the effects of DX levels on the properties of AlxGa1−xAs and certain heterojunction device structures are summarized. Studies of alloy effects, variations of the local atomic environment near the donor, are reviewed and microscopic models of the DX center are discussed in terms of these and other recent experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 39
Copyright
Copyright © Materials Research Society 1990

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References

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