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Properties Of Cosb3 Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

Hans-Martin Christen ,
David G. Mandrus ,
David P. Norton ,
Lynn A. Boatner  and
Brian C. Sales
Hans-Martin Christen
Affiliation:
Neocera, Inc., 10000 Virginia Manor Road, Suite 300, Beltsville, MD 20705–4215
David G. Mandrus
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831
David P. Norton
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831
Lynn A. Boatner
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831
Brian C. Sales
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 37831
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Abstract

Polycrystalline CoSb3 films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas.

Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3×1020 holes/cm3. The Hall mobility is found to be 50 to 60 cm2 /Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 478: Symposium Q – Thermoelectric Materials - New Directions and Approaches , 1997 , 217
Copyright
Copyright © Materials Research Society 1997

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References

1. Mahan, G., Sales, B., and Sharp, J., Physics Today, March 1997, 42.Google Scholar
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4. Chrisey, D. B. and Hubler, G. K. (Eds.), Pulsed Laser Deposition of Thin Films (John Wiley & Sons, Inc., New York, 1994).Google Scholar