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Properties of C and CN Films Prepared by Mass-Separated Hyper-Thermal Carbon and Nitrogen Ions

Published online by Cambridge University Press:  10 February 2011

N. Tsubouchi ,
Y. Horino ,
B. Enders ,
A. Chayahara ,
A. Kinomura  and
K. Fujii
N. Tsubouchi
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, [email protected]
Y. Horino
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, [email protected]
B. Enders
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, [email protected]
A. Chayahara
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, [email protected]
A. Kinomura
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, [email protected]
K. Fujii
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, [email protected]
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Abstract

Amorphous carbon films and CN films were prepared by ion beam deposition using isotopically mass-separated, hyper-thermal (50–400eV) ion species such as 12C2−, 12C14N− or simultaneous 12C2− and 14N+ under high vacuum condition. Film properties such as structures, bonding states, compositions, etc. were investigated. The optical band gaps of amorphous carbon films deposited by using 12C2−ions or CN films deposited by using 12C14N− ions were estimated from optical constants. The gaps were about 2.3eV for the amorphous carbon films and about 0.8 eV for the CN films. Energy dependence of optical constants of CN films formed by simultaneous deposition of C2− and N+ was investigated. The refractive index (n) and extinction coefficient (k) at λ = 675nm increased 1.5 to 2.4 and 0.3 to 1.3, respectively, with increasing N+ kinetic energy. The relations between bonding states and kinetic energy of hyper-thermal ions are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 307
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Coll, B. F. and Chhowalla, M., Surf. Coat. Technol. 79, 76 (1996).Google Scholar
[2] Voevodin, A. A., Laube, S. J. P., Walck, S. W., Solomon, J. S., Donley, M. S. and Zabinski, J. S., J. Appl. Phys. 78, 4123 (1995).Google Scholar
[3] Yang, P., Zhang, Z. J., Hu, J., Lieber, C. M., Mat. Res. Soc. Symp. Proc. Vol 438, 593 (1997).Google Scholar
[4] Ishikawa, J., Takeiri, Y., Ogawa, K. and Takagi, T., J. Appl. Phys. 61, 2509 (1987).Google Scholar
[5] Kulik, J., Lempert, G. D., Grossman, E., Marton, D., Rabalais, J. W., Lifshitz, Y., Phys. Rev. B 52, 15812 (1995).Google Scholar
[6] Robertson, J. L., Moss, S. C., Lifshitz, Y., Kasi, S. R., Rabalais, J. W., Lempert, G. D. and Rapoport, E., Science, 24, 1047 (1989).Google Scholar
[7] Liu, A. Y., Cohen, M. L., Phys. Rev. B41, 10727 (1990).Google Scholar
[8] Matsumoto, O., Kotaki, T., Shikano, H., Takemura, K., Tanaka, S., J. Electrochem. Soc. 141, L16 (1994).Google Scholar
[9] Clay, K. J., Speakman, S. P., Amaratunga, G. A. J., Silva, S. R. P., J. Appl. Phys. 79, 7227 (1996).Google Scholar
[10] Chen, M. Y., Li, D., Lin, X., Dravid, V. P., Chung, Y.-W., Wong, M.-S., Sproul, W. D., J. Vac. Sci. Technol. A11, 521 (1993).Google Scholar
[11] Marton, D., Al-Bayati, A. H., Todorov, S. S., Boyd, K. J., Rabalais, J. W., Nucl. Instrum. Meth. Phys. Res. B90, 277 (1994).Google Scholar
[12] Hofsdiss, H. C., Ronning, C., Griesmeier, U., Gross, M., Mat. Res. Soc. Symp. Proc. Vol. 354, 93 (1995).Google Scholar
[13] Tsubouchi, N. Horino, Y., Enders, B., Chayahara, A., Kinomura, A., Fujii, K., Mat. Res. Soc. Symp. Proc. Vol.438, 605 (1997).Google Scholar
[14] Zhao, X.-A., Ong, C. W., Tsang, Y. C., Wong, Y. W., Chan, P. W., Coy, C. L., Appl. Phys. Lett. 66, 2652 (1995).Google Scholar
[15] Teter, D. M., Hemley, Russell J., Science 271, 53(1996).Google Scholar
[16] Horino, Y. Tsubouchi, N., Fujii, K., Nakata, T., Takagi, T., Nucl. Instrum. Meth. Phys. Res. B106, 657(1995).Google Scholar
[17] Han, H.-X., Feldman, B. J., Solid State Commun. 65, 921(1988).Google Scholar
[18] Clay, K. J., Speakman, S. P., Amaratunga, G. A. J., Silva, S. R. P., J. Appl. Phys. 79, 7227 (1996).Google Scholar
[19] Kumar, S., Tansley, T. L., Thin Solid Films, 256, 44(1995).Google Scholar
[20] Bousetta, A., Lu, M., Bensaoula, A., Schultz, A., Appl. Phys. Lett, 65 (6), 696 (1994).Google Scholar
[21] Kaufman, J. H., Metin, S., Saperstein, D. D., Phys. Rev. B39, 13053 (1989).Google Scholar
[22] Robertson, J., Phil. Mag. B76, 335 (1997).Google Scholar