Chemical annealing is a powerful technique for controlling H bonding and optical absorption in amorphous semiconductors. We have shown previously that the use of careful chemical annealing by Argon can lower the bandgap of a-Si:H while maintaining electronic properties in both films and devices. In this work, we describe new work on chemical annealing of A-(Si,Ge):H films and devices. The technique consists in growing very thin layers (1-3 nm) of A-(Si,Ge) from mixtures of hydrogen, Silane and Germane, and then subjecting this thin layer to ion bombardment by Ar. The cycle is repeated many times to achieve the desired thickness of the intrinsic layer. The resulting film and device were measured for their composition using energy dispersive spectroscopy (EDS) analysis. We discovered that the composition itself, namely the Ge:Si ratio in the film, could be varied by changing the ion bombardment conditions. Lower energy bombardment led to a higher Ge:Si ratio for the same germane/Silane ratio in the gas phase. By controlling ion bombardment during the Ar annealing cycle, we were able to reduce the H content of the film and achieve good electronic properties. It will be shown that by appropriate control over ion energies, one can obtain films and devices which are of good quality and low bandgap as well.