Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:15:49.692Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties and Decomposition Behaviors of Reactively Sputtered Pt(O) Electrode Materials

Published online by Cambridge University Press:  10 February 2011

K. L. Saenger  and
S. M. Rossnagel
K. L. Saenger
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, [email protected].
S. M. Rossnagel
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, [email protected].
Get access

Abstract

The possibility that oxygen-containing Pt might be superior to conventional Pt as an electrode for high-epsilon (HE) and ferroelectric (FE) perovskites has led to renewed interest in the family of Pt(O) materials. Here we report on the properties and decomposition behaviors of reactively sputtered Pt(O)-PtOx electrode materials having x in the range 0 to ∼1.4. Phases of Pt(O) identified included <111>-textured cubic Pt (x < 0.2), tetragonal PtO (x ∼ 1), and amorphous platinum oxide a-PtOx (x ∼ 1.4). Film texture, morphology, resistivity, adhesion, and oxygen content were examined before and after annealing in O2 and N2 at temperatures approximating those of HE/FE deposition and processing (400 - 650°C). After annealing at 650 °C for 5 min, all Pt(O) films lost oxygen and showed growth in metallic Pt phases whose orientations were often <200> or <220> rather than the <111> orientation typically produced by physical vapor deposition of the pure metal. Pt(O) films having a PtO-like structure typically showed only surface oxygen loss, with close to original oxygen levels left in the film bulk, suggesting that the oxygen in these films may be retained long enough to have a beneficial effect on HE/FE layers at later stages in processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 57
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Joo, J. H., Seon, J. M., Jeon, Y. C., Oh, K. Y., Roh, J. S., and Kim, J. J., Appl. Phys. Lett. 70 3053 (1997).Google Scholar
2. Tsunemine, Y., Okudaira, T., Kashihar, K., Hanafusa, K., Yutani, A., Fujita, Y., Matsushita, M., Itoh, H., and Miyoshi, H., Proc. IEEE International Electron Devices Meeting Technical Digest 811 (1998).Google Scholar
3. Lee, B. Soo and Lee, J. Y., Jpn. J. Appl. Phys. 38 L870 (1999).Google Scholar
4. Nakamura, T., Nakao, Y., Kamisawa, A., and Takasu, H., Appl. Phys. Lett. 65 1522 (1994);Google Scholar
Nakamura, T., Fujimori, Y., Izumi, N., and Kamisawa, A., Jpn. J. Appl. Phys. 37 1325 (1998).Google Scholar
5. Fujisawa, H., Hyodo, S., Jitsui, K., Shimizu, M., Niu, H., Okino, H., and Shiosaki, T., Integrated Ferroelectrics 21 107 (1998).Google Scholar
6. Hecq, M., Hecq, A., and Delrue, J. P., Robert, T., J. Less-Common Met. 64 25 (1979).Google Scholar
7. McBride, J. R., Graham, G. W., Peters, C. R., and Weber, W. H., J. Appl. Phys. 69 1596 (1991).Google Scholar
8. Neff, H., Henkel, S., Hartmannsgruber, E., Steinbeiss, E., Michalke, W., Steenbeck, K., and Schmidt, H. G., J. Appl. Phys. 79 7672 (1996).Google Scholar
9. Abe, Y., Yanagisawa, H., and Sasaki, K., Jpn. J. Appl. Phys. 37 4482 (1998).Google Scholar
10. Park, D. Y., Lee, D. S., Kim, M. H., Park, T. S., Woo, H. J., Yoon, E., Chun, D. I., and Ha, J., Mat. Res. Soc. Symp. Proc. 441 335 (1997);Google Scholar
Kim, M. H., Park, T. S., Lee, D. S., Yoon, E., Park, D. Y., Woo, H. J., Chun, D. I., and Ha, J., J. Mater. Res. 14 634 (1999);Google Scholar
Kim, M. H., Park, T. S., Yoon, E., Lee, D. S., Park, D. Y., Woo, H. J., Chun, D. I., and Ha, J., J. Mater. Res. 14 1255 (1999).Google Scholar
11. Handbook of Chemistry and Physics, 67th ed, edited by Weast, R. C. (CRC, Boca Raton, FL, 1986).Google Scholar
12. Cahen, D., Ibers, J. A., and Wagner, J. B. Jr, Inorganic Chemistry 13 1377 (1974).Google Scholar
13. Saenger, K. L. and Andricacos, P. A., unpublished.Google Scholar
14. Lee, D.S., Park, D.Y., Kim, M.H., Chun, D.I., Ha, J., and Yoon, E., Mat. Res. Soc. Symp. Proc. 441 341 (1997);Google Scholar
Lee, D. S., Chun, D. I., Park, D. Y., Ha, J. W., Yoon, E. J., Kim, M. H., Woo, H. J., U.S. Patent No. 5 736 422 (7 April 1998).Google Scholar