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Properties and Applications of Molecular Beam Epitaxial Silicides

Published online by Cambridge University Press:  25 February 2011

K. L. Wang  and
Y. C. Kao
K. L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
Y. C. Kao
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
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Abstract

Transition metal silicides are now being used as essential and integral elements of microelectronics technology. Epitaxial growth and deposition provide additional flexibility for many device and circuit applications.

In this paper, various epitaxial growth techniques, namely solid phase epitaxy and molecular beam epitaxy are reviewed. The resulting morphology, crystallinity, and Schottky barrier heights as well as deep-level defects are contrasted. The parallel and perpendicular strains as a function of film thickness is reported.

Application of the epitaxial silicide in improving conventional integrated circuits as well as in fabricating new devices are discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 235
Copyright
Copyright © Materials Research Society 1986

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