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Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces

Published online by Cambridge University Press:  01 February 2011

Karsten Henkel ,
Mohamed Torche ,
Rakesh Sohal ,
Carola Schwiertz ,
Patrick Hoffmann  and
Dieter Schmeißer
Karsten Henkel
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensoik, K.-Wachsmann-Allee 17, Cottbus, 03046, Germany, 0049-(0)355-694069, 0049-(0)355-693931
Mohamed Torche
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-A. 17, Cottbus, 03046, Germany
Rakesh Sohal
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-A. 17, Cottbus, 03046, Germany
Carola Schwiertz
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-A. 17, Cottbus, 03046, Germany
Patrick Hoffmann
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-A. 17, Cottbus, 03046, Germany
Dieter Schmeißer
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-A. 17, Cottbus, 03046, Germany
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Abstract

We combine high-k dielectrics with wide band gap semiconductors for new possibilities for high frequency and high power applications. We investigate the dielectric properties of Praseodymium based oxides and silicates by preparing MIS structures consisting of metal layer (M), PrOx (praseodymium oxide) as a high-k insulating layer (I), and silicon (Si) or silicon carbide (SiC) as semiconductor substrates (S). Our approach consists both, electrical measurements and spectroscopic characterization to analyze properties of the various interfaces within the stacks.

For the electrical measurements we produce PrOx layers in the thickness range of 10nm to 240nm. We use capacitance-voltage analysis and determine permittivity values of 8 to 20 depending on physical thickness resulting in an equivalent oxide thickness (EOT) down to 5nm. These data are consistent with the formation of a Pr-silicate between Si and PrOx.

In order to prevent interface reactions and to improve the band alignment an interfacial layer is introduced into the stack between the semiconductor and the high-k material. We find aluminum oxynitride (AlON) as a suitable layer which reduces the interface state density to a mean value of 5E11cm2/Vs and the leakage current (1V above flat band) below 1E-5A/cm2.

Keywords

Prelectrical propertiesx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B10-11
Copyright
Copyright © Materials Research Society 2006

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