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Progress Toward Thin-Film LiNbO3 Waveguides on GaAs

Published online by Cambridge University Press:  15 February 2011

J. J. Kingston
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
F. Leplingard
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
D. K. Fork
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

The availability of epitaxial ferroelectric films on semiconductor substrates would open up many options for integrated optics technology. There are significant materials issues involved in achieving this integration and we will report on progress toward optical waveguide fabrication on GaAs substrates. As a first step, we are investigating the fabrication of z-LiNbO3 waveguides on A12O3-c. The films have been deposited by off-axis rf magnetron sputtering and characterized by x-ray diffraction, atomic force microscopy, and scanning electron microscopies. Prism coupling has been used to determine waveguide thickness, indices of refraction and propogation losses. Issues concerning crystallography, texture, composition, surface roughness and processing will be discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

1. Nashimoto, K.. Fork, D. K., and Geballe, T. H., Appl. Phys. Lett. 60, 1199 (1992)Google Scholar
2. Hung, L. S., Zheng, L. R., and Blanton, T. N., Appl. Phys. Lett. 60, 3129 (1992)Google Scholar
3. Tarsa, E. J., DeGraef, M., Clarke, D. R., Gossard, A. C., and Speck, J. S., J. Appl. Phys. 73, 3276 (1993)Google Scholar
4. Fork, D. K. and Andeson, G. B., Appl. Phys. Lett. 63, 1029 (1993)Google Scholar
5. Agostinelli, J. A., Braunstein, G. H., and Blanton, T. N., Appl. Phys. Lett. 63, 123 (1992)CrossRefGoogle Scholar
6. Takada, S., Ohnishi, M., Hayakawa, H., and Mikoshiba, N., Appl. Phys. Lett. 24, 490 (1974)Google Scholar
7. Rost, T. A., Lin, He, and Rabson, T. A., J. Appl. Phys. 72, 4336, (1992) and C. H.-J. Huang, H. Lin, and T. A. Rabson, Proceedings of ISAF '92.CrossRefGoogle Scholar
8. Tamada, H., Yamada, A., and Saitoh, M., J. Appl. Phys. 70,2536, (1991)CrossRefGoogle Scholar
9. Clark, G. J., Marwick, A. D., Koch, R. H., and Laibowitz, R. B., Appl. Phys. Lett. 51, 139 (1987)Google Scholar
10. Fejer, M. M., private communicationGoogle Scholar