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The Progress of Plasma Anodization and its Applications

Published online by Cambridge University Press:  21 February 2011

Li Qiong  and
Xu Jingfang
Li Qiong
Affiliation:
Electronics Department, East China Normal University, Shanghai 200062 PR China
Xu Jingfang
Affiliation:
Electronics Department, East China Normal University, Shanghai 200062 PR China
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Abstract

RF stimulated DC discharge mode was developed and used in plasma anodization. Equipment operating in this mode has been set up for anodizing semiconductor materials. To improve the feature of this equipment, enhanced electrode was induced. Anodized oxide film of silicon was applied as gate oxide film in MOSFETs on SOI structure. This paper describes this discharge mode and enhanced electrode and give the properties of the oxide film and MOSFETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 143
Copyright
Copyright © Materials Research Society 1991

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References

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