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Progress in Antimonide-Based Mid-IR Lasers*

Published online by Cambridge University Press:  10 February 2011

G.W. Turner ,
M.J. Manfra ,
H.K. Choi ,
A.K. Goyal ,
S.C. Buchter ,
S.D. Calawa ,
A. Sanchez  and
D.L. Spears
G.W. Turner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02420
M.J. Manfra
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02420
H.K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02420
A.K. Goyal
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02420
S.C. Buchter
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02420
S.D. Calawa
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02420
A. Sanchez
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02420
D.L. Spears
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02420
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Abstract

Mid-infrared optically pumped semiconductor lasers (OPSLs) are presently being investigated for a variety of commercial and military applications. Active regions in such optically pumped lasers must meet the dual requirements of high gain and low loss at mid-IR wavelengths, combined with sufficient absorption of the optical pump at shorter wavelengths for efficient power conversion. In this paper we report the successful growth, fabrication, and characterization of high-performance OPSLs that employ novel active regions consisting of combinations of GalnAsSb integrated-absorber layers with type-II GaInSb/InAs quantum well regions. With 1.85-µm optical pumping at 85 K, OPSLs with such active regions have exhibited a peak output power of 2.1 W at 3.9 pm, improved beam quality, power conversion efficiency of ∼8%, and characteristic temperatures of ∼47 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 3
Copyright
Copyright © Materials Research Society 2000

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Footnotes

*

This work was sponsored by the Air Force Research Laboratory, Department of the Air Force under AF Contract No. F19628-95-C-002. The opinions, interpretations, conclusions and recommendations are those of the authors and are not necessarily endorsed by the United States Air Force.

References

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