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Progress and Challenges for Chemical Mechanical Polishing of Gallium Nitride

Published online by Cambridge University Press:  17 July 2013

Hideo Aida ,
Toshiro Doi ,
Tsutomu Yamazaki ,
Hidetoshi Takeda  and
Koji Koyama
Hideo Aida
Affiliation:
Namiki Precision Jewel Co. Ltd., NJC Institute of Technology, Tokyo 123-8511, Japan Kyushu University, KASTEC, Fukuoka 816-8580, Japan
Toshiro Doi
Affiliation:
Kyushu University, KASTEC, Fukuoka 816-8580, Japan
Tsutomu Yamazaki
Affiliation:
Kyushu University, KASTEC, Fukuoka 816-8580, Japan
Hidetoshi Takeda
Affiliation:
Namiki Precision Jewel Co. Ltd., NJC Institute of Technology, Tokyo 123-8511, Japan
Koji Koyama
Affiliation:
Namiki Precision Jewel Co. Ltd., NJC Institute of Technology, Tokyo 123-8511, Japan
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Abstract

Progress and challenges for chemical mechanical polishing (CMP) of GaN are discussed in detail by focusing on the importance of GaN surface oxidation during CMP. We report on the significant difference in the removal rates between Ga2O3 and GaN, suggesting that the surface oxidation reaction is the rate-limiting step for CMP of Ga-faced GaN. This is actually proved by the fact that ex-situ surface oxidation by annealing in air prior to CMP exhibits a marked reduction in the required CMP time to produce a damage-free surface. As a future challenge, we outline two of our recent developments, ultraviolet-assisted CMP and atmosphere-controlled CMP, that enable in-situ oxidation, since ex-situ oxidation must be modified to in-situ to further advance CMP.

Keywords

nitridechemical reactionoxidation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1560: Symposium BB – Evolutions in Planarization—Equipment, Materials, Techniques and Applications , 2013 , mrss13-1560-bb03-02
Copyright
Copyright © Materials Research Society 2013 

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