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Production of InSb Thin Films Through Annealing Sb2S3-In Thin Films

Published online by Cambridge University Press:  10 February 2011

M. T. S. Nair ,
Y. Rodríguez-Lazcano  and
P. K. Nair
M. T. S. Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autonoma de México, A. P. 34, Temixco, Morelos 62580, MEXICO, [email protected]
Y. Rodríguez-Lazcano
Affiliation:
Permanent address: Faculty of Physics-IMRE, University of Havana, Cuba
P. K. Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autonoma de México, A. P. 34, Temixco, Morelos 62580, MEXICO, [email protected]
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Abstract

A method to produce large area indium antimonide thin films through a reaction, Sb2S3 + 2 In → 2 InSb + 3 S↑ is presented. A thin film of Sb2S3 with typically 0.2 μm thickness is produced on glass substrate by chemical bath deposition (CBD) at 10°C using thiosulfatoantimonate(III) complex. Subsequently, a thin film of indium is deposited on the Sb2S3 film by thermal evaporation. Annealing the thin film stack of Sb2S3-In at 300°C in a nitrogen atmosphere produces the InSb thin film. The formation of this film is confirmed by x-ray diffraction studies. We would discuss the optimization of the individual film thickness in the Sb2S3-In stack to produce a thin film of single phase InSb or a heterostructure, Sb2S3-InSb. The electrical and optical properties of the films are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 169
Copyright
Copyright © Materials Research Society 1999

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References

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