Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-19T06:45:11.905Z Has data issue: false hasContentIssue false
  • English
  • Français

Processing, X-Ray, and TEM Studies of QS87 Series 56 KΩ/Square Thick Film Resistors

Published online by Cambridge University Press:  10 February 2011

Gary M. Crosbie ,
Frank Johnson  and
William T. Donlon
Gary M. Crosbie
Affiliation:
Ford Research Laboratory, Ford Motor Company, MD 3182, SRL Bldg. P.O. Box 2053, Dearborn, MI 48121–2053, [email protected]
Frank Johnson
Affiliation:
Ford Research Laboratory, Ford Motor Company, MD 3182, SRL Bldg. P.O. Box 2053, Dearborn, MI 48121–2053, [email protected]
William T. Donlon
Affiliation:
Ford Research Laboratory, Ford Motor Company, MD 3182, SRL Bldg. P.O. Box 2053, Dearborn, MI 48121–2053, [email protected]
Get access

Abstract

Thick film resistors are glass/metal oxide nanocomposites used in hybrid microcircuits. These components have a small temperature coefficient of resistance that is useful in systems that experience a wide range of service temperatures. Test samples were produced by printing, drying, and firing resistor pastes in a laboratory process that simulated production conditions. The process parameters of peak firing temperature, time at peak temperature, and probe current were factors in a 23 factorial experiment that measured in-situ resistance (resistance during processing), as-fired resistance, and the temperature coefficients of resistance. As-fired resistance is shown to increase with firing time and temperature. In-situ resistance exhibited a small decrease with increasing firing temperature due to thermally-activated glass conduction at firing temperatures. The temperature coefficient of resistance measurements show that R[T] curve flattens with increasing firing time and temperature. X-ray diffraction revealed Pb-ruthenate, alumina, and Zr-silicate phases to be dispersed in the glass. Transmission electron microscopy in conjunction with energy dispersive x-ray spectroscopy revealed that the conductive phases, Pb- and CuBi-ruthenate particles, increased in size with increasing firing time and temperature. Lattice parameter measurements revealed only a small increase in the ruthenate structure. Resistance changes are attributed to increased separation of the conductive ruthenate particles by coarsening.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 457: Symposium V – Nanophase and Nanocomposite Materials II , 1996 , 381
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Johnson, F., Crosbie, G. M., and Donion, W. T., “The Effects of Processing Conditions on the Resistivity and Microstructure of Ruthenate-Based Thick Film Resistors,” Journal of Materials Science: Materials in Electronics, in press, Vol. 8, No. 2, (1997).Google Scholar
2. Pike, G. E. and Seager, C. H., “Electrical Properties and Conduction Mechanisms of Ru-Based Thick Film (Cermet) Resistors,” J. Appl. Phys., 48, 5152 (1977).Google Scholar
3. Pfeiffer, Th. and Bouchard, R. J., “Modeling of Thick Film Resistors,” Ceramic Transactions, 33 405 (1993).Google Scholar
4. Morten, B., Masoero, A., Prudenziati, M., Manfredini, T., J. Phys. D: Appl. Phys., 27, 2227 (1994).Google Scholar