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Processing and Characterization of Pure and Doped Ba0.6Sr0.4TiO3 Thin Films for Tunable Microwave Applications

Published online by Cambridge University Press:  18 March 2011

P. C. Joshi ,
M. W. Cole ,
E. Ngo  and
C. W. Hubbard
P. C. Joshi
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD 21005, U.S.A.
M. W. Cole
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD 21005, U.S.A.
E. Ngo
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD 21005, U.S.A.
C. W. Hubbard
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD 21005, U.S.A.
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Abstract

Ba1−xSrxTiO3 thin films are being developed for high-density DRAM devices. The nonlinearity of its dielectric properties with respect to applied dc voltage makes it attractive for tunable microwave devices. For successful integration into microwave devices, extremely reliable Ba1−xSrxTiO3 thin films with enhanced dielectric and insulating properties are desired. Properties of Ba1−xSrxTiO3are typically varied by changing the Ba/Sr ratio and/or doping. In this paper, we reports on the effects of acceptor and donor doping on the microstructural and electrical properties of Ba0.6Sr0.4TiO3 (BST) thin films deposited by metalorganic solution deposition technique on platinum coated silicon substrates. The effects of doping on structure, dielectric permittivity, dielectric loss tangent, and leakage current have been analyzed. The structure of the films was analyzed by x-ray diffraction (XRD). The surface morphology of the films was examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on MIM capacitors using Pt as the top and bottom electrode. It was possible to significantly improve the dielectric loss and leakage current characteristics, and control the dielectric tunability by doping the BST thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 656: Symposium DD – Materials Issues for Tunable RF and Microwave Devices II , 2000 , DD4.9
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Baliga, J., Semiconductor International 22, 79 (1999).Google Scholar
2. Keis, V. N., Kozyrev, A. B., Khazov, M. L., Sok, J., and Lee, J. S., Electron. Lett. 34, 1107 (1998).Google Scholar
3. Gevorgian, S. S., Carlsson, E. F., Rudner, S., Helmersson, U., Kollberg, E. L., Wikborg, E., and Vendik, O. G., IEEE Trans. Appl. Supercond. 7, 2458 (1997).Google Scholar
4. Ueda, T., Noma, A., and Ueda, D., Integr. Ferroelectr. 7, 45 (1995).Google Scholar
5. Abbas, F., Davis, L. E., and Gallop, J. C., IEEE Trans. Appl. Superconduct. 5, 3511 (1995).Google Scholar
6. Knauss, L. A., Pond, J. M., Horwitz, J. S., Chrisey, D. B., Mueller, C. H., and Treece, R., Appl. Phys. Lett. 69, 25 (1996).Google Scholar
7. Geyer, R. G., Grosvenor, J. H. Jr., and Synowczynski, J., Proc. of 101st Annual Meeting of The American Ceramic Society (to be published).Google Scholar
8. Joshi, P. C., Ramanathan, S., Desu, S. B., and Stowell, S., Phys. Stat. Sol. (a) 161, 361 (1997).Google Scholar
9. Joshi, P. C. and Cole, M. W., Appl. Phys. Lett. 77, 289 (2000).Google Scholar
10. Lee, B. I. and Pope, E. J. A., Chemical Processing of Ceramics (Mercel Dekker, New York, 1994).Google Scholar
11. Cole, M. W., Joshi, P. C., Ervin, M. H., Wood, M. C., and Pfeffer, R. L., Thin Solid Films 374, 34 (2000).Google Scholar
12. Flaviis, F. D., Alexopoulos, N. G., and Stafsudd, O. M., IEEE Trans. Microwave Theory Tech. 45, 963 (1997).Google Scholar