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Process Uniformity and Electrical Characteristics of Thin Gate Dielectrics Grown by Ramped-Temperature Transient Rapid Thermal Oxidation of Silicon

Published online by Cambridge University Press:  25 February 2011

Mehrdad M. Moslehit  and
Ahmad Kermani
Mehrdad M. Moslehit
Affiliation:
Semiconductor Process And Design Center, Texas Instruments, Dallas, Texas 75265
Ahmad Kermani
Affiliation:
Peak Systems, Fremont, California 94538
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Abstract

Rapid thermal oxidation (RTO) of Si using transient linearly-ramped-temperature saw-toothed (LRT-ST) and triangular (LRT-TA) thermal cycles has been examined through evaluations of the process uniformity, slip dislocation patterns, and electrical characteristics of MOS devices. The strong effects of the thermal cycle parameters on process uniformity and slips indicate that the overall performance of an RTP tool must be specified both under the steady-state and transient thermal cycles. The electrical characteristics of MOS devices with LRT-grown gate oxides are comparable to those for devices with oxides grown by the trapezoidal thermal cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 319
Copyright
Copyright © Materials Research Society 1989

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References

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