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Process Induced Extended Defects in SiC Grown via Sublimation

Published online by Cambridge University Press:  11 February 2011

R. Yakimova ,
M. Syväjärvi ,
H. Jacobson ,
R. R. Ciechonski ,
N. Vouroutzis  and
J. Stoemenos
R. Yakimova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-58183 Linköping, Sweden
M. Syväjärvi
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-58183 Linköping, Sweden
H. Jacobson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-58183 Linköping, Sweden
R. R. Ciechonski
Affiliation:
Department of Physics and Measurement Technology, Linköping University, SE-58183 Linköping, Sweden
N. Vouroutzis
Affiliation:
Physics Department, Aristotele University of Thessaloniki, 54124 Thessaloniki, Greece
J. Stoemenos
Affiliation:
Physics Department, Aristotele University of Thessaloniki, 54124 Thessaloniki, Greece
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Abstract

Three possible situations of extended defect formation during sublimation growth of SiC have been investigated: a-plane growth, occurrence and effect of irregular growth interfaces, and development of elongated open volume morphological defects. While in the first case the most preferred defects are basal plane stacking faults (SFs), in other studied samples threading dislocations and high energy SFs have been revealed, these suggesting stress accumulated in the course of the growth process. Formation of morphological defects of the above character has been observed in the presence of micropipes and step flow growth mode on vicinal surfaces. Growth on atomically flat surfaces can eliminate this type of defects but the polytype uniformity is more difficult to maintain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K3.5
Copyright
Copyright © Materials Research Society 2003

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References

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