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Process Control During Liquid Phase Rerowth of 3C-SiC on Si Substrates

Published online by Cambridge University Press:  01 February 2011

Mark Smith ,
Matthias Voelskow ,
Richard A. McMahon ,
Andreas Muecklich ,
Wolfgang Anwand  and
Wolgang Skorupa
Mark Smith
Affiliation:
[email protected], University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Matthias Voelskow
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
Richard A. McMahon
Affiliation:
[email protected], University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Andreas Muecklich
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
Wolfgang Anwand
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
Wolgang Skorupa
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
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Abstract

Flash lamp annealing in the millisecond regime of heteroepitaxial silicon carbide on silicon structures involves melting the Si below the SiC layer, but the deep facetted nature of the solid-liquid interface leads to unacceptable surface roughness. This paper describes a method of controlling melting by implanting a high dose of carbon or germanium at a controlled depth below the Si/SiC interface, which significantly alters the melting characteristics of the silicon. Results confirm the effectiveness of these approaches for increasing surface uniformity, making liquid phase processing compatible with standard device fabrication techniques. A thermal model has also been developed to describe this process and results indicate that the theoretical work is consistent with the experimental evidence. The model is a valuable tool for predicting onset of melting, maximum temperatures and process windows for liquid phase epitaxy.

Keywords

liquid-phase epitaxy (LPE)simulationion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B08-04
Copyright
Copyright © Materials Research Society 2006

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References

1 Stoemenos, J., Panknin, D., Eickhoff, M., Heera, V. and Skorupa, W., J. Electrochem. Soc. 151, G136–G143 (2004).Google Scholar
2 Smith, M., McMahon, R. A., Voelskow, M., Skorupa, W. and Stoemenos, J., J. Cryst. Growth, 277, 162 (2004)Google Scholar
3 Voelskow, M., Smith, M., McMahon, R. and Skorupa, W., Appl. Phys. Lett. 87, 241901 (2005).Google Scholar
4 Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Ranges of Ions in Solids (New York, Pergamon, 1985 ), Vol. 1.Google Scholar
5 Scare, R. I. and Slack, G. A., J. Chem. Phys. 30, 1551 (1959).Google Scholar
6 Brandes, E. A. and Brook, G. B., Smithells Metals Reference Book, 7th ed. (ButterworthHeinemann, Oxford, 1998).Google Scholar