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Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100)

Published online by Cambridge University Press:  25 February 2011

T. P. Schneider ,
J. Cho ,
J. Vander Weide ,
S.E. Wells ,
G. Lucovsky ,
R.J. Nemanich ,
M.J. Mantini ,
R.A. Rudder  and
R.J. Markunas
T. P. Schneider
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
J. Cho
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
J. Vander Weide
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
S.E. Wells
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
M.J. Mantini
Affiliation:
Research Triangle Institute, Research Triangle Park, N.C. 27709
R.A. Rudder
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
R.J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, N.C. 27709
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Abstract

This study details low pressure and low temperature cleaning of Si(100) surfaces. The properties of Si surfaces exposed to variations in plasma generated H are described. The diagnostic techniques used to study the processing conditions are residual gas analysis (RGA) and emission spectroscopy. The surface is characterized by low energy electron diffraction (LEED) and angle resolved uv-photoemission spectroscopy (ARUPS). During the cleaning, Si complexes are formed which indicates the removal of species from the Si(100) surface. Plasma cleaning at 300°C results in a Si(100) surface with 2×1 surface diffraction patterns as detected by LEED. Measurements by ARUPS with He I radiation show the absence of Si surface states on the Hpassivated surface. The ARUPS measurements also indicate that the H begins to desorb from the Si(100) H-passivated surface at ∼500°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 333
Copyright
Copyright © Materials Research Society 1991

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References

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