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Problems in Large Size Amorphous Silicon Plate Manufacturing

Published online by Cambridge University Press:  21 February 2011

J. P. M. Schmttt
J. P. M. Schmttt*
Affiliation:
SOLEMS S.A. 3, rue Leon Blum, 91120 Palaiseau, France.
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Abstract

The growing aSi:H based component industry needs large PECVD machines for high throughput coating of flat substrates up to 1 meter in size. Deposition uniformity can be affected by gas depletion in diffusion and laminar gas flow geometries. Deposition rate is shown to be in conflict with large size uniformity. Main uniformity problems are found to originate from uneven RF voltage distribution, the effect is shown to be amplified near plasma equilibrium transitions. Contamination, a key factor for production quality, is controlled by the hot pressurized plasma box by both reducing unwanted background gas near UHV level and by allowing systematic fast plasma cleaning without machine corrosion or post contamination. Powder formation and dynamic is discussed based on several novel experiments and powder formation threshold is shown to be pushed away if the plasma is made intermittent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 631
Copyright
Copyright © Materials Research Society 1991

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References

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