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The Problem of Doping Wide Gap II-VI Compound Semiconductors and Its Solutions

Published online by Cambridge University Press:  21 February 2011

W. I. Wang
W. I. Wang*
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
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Abstract

Wide gap II-VI compound semiconductors are difficult to be doped amphoterically. After more than thirty years of research in II-VI compound semiconductors, there does not even exist a satisfatory simultaneous explanation as to why ZnSe can be easily doped n-type while undoped ZnTe only exhibits p-type conductivity. In this paper we propose an explanation based on the III-V/II-VI analogy which for the first time can explain these phenomena, and provide solutions to the problem of doping II-VI compound semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 319
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Park, Y.S. and Shin, B.K., “Recent advances in injection luminescence in II-VI compounds”, pp. 135–167, in ELECTROLUMINESCENCE edited by Panlove, J.I., Springer-Verlag, New York, 1976.Google Scholar
[2] Marfaing, Y., Prog. Crystal Growth Charact. 4, 317 (1981).Google Scholar
[3] Mandel, G., Phys. Rev. 134 A1073 (1964).Google Scholar
[4] DePuydt, J.M., Cheng, H., Potts, J.E., Smith, T.L., and Mohapatra, S.K., J. Appl. Phys. 62, 4756 (1987).Google Scholar
[5] Cheng, H., DePuydt, J.M., Potts, J.E., and Haase, M.A., J. Crystal Growth 95, 512 (1989).Google Scholar
[6] Shazad, K., Olego, D., Cammack, D., Phys. Rev. B, 39 13016 (1989).CrossRefGoogle Scholar
[7] Wang, W.I., Marks, R.F., and Vina, L., J. Appl. Phys. L 2, 937 (1986).Google Scholar
[8] Effer, D. and Etter, P.J., J. Phys. Chem. Solids 25, 451 (1964).Google Scholar
[9] Haase, M.A., Cheng, H., DePuydt, J.M., and Potts, J.E., J. Appl. Phys. 67, 448 (1990).Google Scholar
[10] Ren, J., Bowers, K.A., Sneed, B., Dreifus, D.L., Cook, J.W. Jr., Schetzina, J., and Kolbas, R.M., Appl. Phys. Lett. 57, 1901 (1990).Google Scholar
[11] Taike, A., Migita, M., and Yamamoto, H., Appl. Phys. Lett. 56, 1989 (1990).Google Scholar
[12] Wang, W.I., Mendez, E.E., Kuan, T.S., and Esaki, L., Appl. Phys. Lett. 47, 826 (1985).CrossRefGoogle Scholar
[13] Vina, L. and Wang, W.I., Appl. Phys. Lett. 48. 6 (1986).Google Scholar
[14] Cho, A.Y., J. Appl. Phys. 41, 2780 (1970).Google Scholar
[15] Wang, W.I., Mendez, E.E., Iye, Y., Kim, M.H., Bose, S.S., and Stillman, G.E., J. Appl. Phys. 60, 8134 (1986).Google Scholar