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Probing the AlxGa1-xN Atomic Distribution via UV-Photoluminescence and Raman at Sub-νm Scale

Published online by Cambridge University Press:  01 February 2011

Leah Bergman ,
Xiang-Bai Chen ,
Tim Householder ,
David McIlroy ,
Wei Jiang Yeh ,
Stephen Terrell  and
Robert F. Davis
Leah Bergman
Affiliation:
Department of Physics, University of Idaho, Moscow ID 83844-0903, [email protected]
Xiang-Bai Chen
Affiliation:
Department of Physics, University of Idaho, Moscow ID 83844-0903, [email protected]
Tim Householder
Affiliation:
Department of Physics, University of Idaho, Moscow ID 83844-0903, [email protected]
David McIlroy
Affiliation:
Department of Physics, University of Idaho, Moscow ID 83844-0903, [email protected]
Wei Jiang Yeh
Affiliation:
Department of Physics, University of Idaho, Moscow ID 83844-0903, [email protected]
Stephen Terrell
Affiliation:
Department of Mechanical Engineering, University of Idaho.
Robert F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Raleigh NC.
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Abstract

The spatial dependence of the band-gap light-emission energy of AlxGa1-xN alloys at composition 0≤ × ≤1 was studied via deep UV-photoluminescence (PL) and Raman microscopy. The data were acquired in a random fashion from an area of ∼ 1mm2 on the sample at steps of ∼1 νm - 200 νm utilizing the 244 nm laser line of probing spot size ∼300 nm radius. Our study indicates that the PL emission energy exhibits random type variations depending on locality: the alloys of composition x=0.12, x=0.22, and x=0.70 exhibit variations of ∼ 10 meV, 30 meV, and 25 meV respectively. The PL of the pure GaN exhibits no spatial dependence while the alloy of x=0.50 exhibits a variation around ∼ 45 meV. Moreover, the functional dependence of the band-gap Eg, on the composition was found to be Eg(x)=3.4(1-x)+6.2x-1.2x(1-x) from which the compositional variation, δx, can be computed for a given variation in the PL emission energy after accounting for the stress effect in the alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.23
Copyright
Copyright © Materials Research Society 2002

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